24FC1026T-I/ST

Product Overview

Category

The 24FC1026T-I/ST belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is primarily used for non-volatile data storage in various electronic devices, such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• Electrically erasable: Data can be erased and reprogrammed electronically.
• High storage capacity: The 24FC1026T-I/ST offers a storage capacity of 1,048,576 bits (128 kilobytes).
• Low power consumption: It operates at low voltage levels, making it energy-efficient.
• High reliability: The EEPROM technology ensures reliable data retention and endurance.

Package

The 24FC1026T-I/ST is available in a small-outline transistor (SOT) package, specifically the SOT-23-5 package.

Essence

The essence of this product lies in its ability to provide non-volatile memory storage with high reliability and low power consumption.

Packaging/Quantity

The 24FC1026T-I/ST is typically packaged in reels, with each reel containing 3,000 units of the chip.

Specifications

• Memory Capacity: 1,048,576 bits (128 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 1,000,000 cycles
• Data Retention: 200 years

Detailed Pin Configuration

The 24FC1026T-I/ST has a total of five pins arranged as follows:

1. VCC: Power supply voltage input
2. SDA: Serial data line for I2C communication
3. SCL: Serial clock line for I2C communication
4. WP: Write-protect pin (optional)
5. GND: Ground reference

Functional Features

• Random access: Allows reading and writing of data at any memory location.
• Byte-level operations: Supports individual byte read, write, and erase operations.
• Hardware write protection: The WP pin can be used to protect the memory from accidental writes.
• Sequential read mode: Enables efficient reading of consecutive memory locations.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Data remains intact even during power loss.
• High reliability: EEPROM technology ensures reliable data retention and endurance.
• Low power consumption: Operates at low voltage levels, reducing energy consumption.
• Compact package: The SOT-23-5 package offers a small form factor suitable for space-constrained applications.

Disadvantages

• Limited storage capacity compared to other memory technologies like flash memory.
• Slower write and erase speeds compared to volatile memory types.

Working Principles

The 24FC1026T-I/ST utilizes EEPROM technology, which employs floating-gate transistors to store charge representing binary data. When data needs to be written or erased, an electric field is applied to the floating gate, altering its charge state. This allows for non-volatile data storage that can be reprogrammed as needed.

Detailed Application Field Plans

The 24FC1026T-I/ST finds applications in various fields, including: 1. Microcontrollers: Used for storing firmware, configuration data, and user settings. 2. Embedded systems: Provides non-volatile memory for critical system parameters and data logging. 3. Consumer electronics: Enables storage of user preferences, device settings, and calibration data in devices like smart TVs, set-top boxes, and audio systems.

Detailed and Complete Alternative Models

1. 24FC1025T-I/ST: Similar to the 24FC1026T-I/ST but with a slightly lower storage capacity of 1,048,576 bits (128 kilobytes).
2. 24FC1024T-I/ST: Offers a storage capacity of 524,288 bits (64 kilobytes), suitable for applications with lower memory requirements.
3. 24FC1028T-I/ST: Provides a higher storage capacity of 2,097,152 bits (256 kilobytes) for applications requiring more memory space.

(Note: The above alternative models are from the same product family and share similar characteristics and features.)

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