23LCV1024T-E/ST

Product Overview

Category

The 23LCV1024T-E/ST belongs to the category of Serial SRAM (Static Random Access Memory) products.

Use

This product is primarily used for storing and retrieving data in electronic devices. It provides non-volatile memory storage, which means that the data remains intact even when power is removed.

Characteristics

• Non-volatile memory: Data retention even without power supply.
• High-speed operation: Allows for fast read and write access.
• Low power consumption: Optimized for energy efficiency.
• Small form factor: Compact size suitable for integration into various electronic devices.

Package

The 23LCV1024T-E/ST is available in a small Thin Small Outline Package (TSOP). This package type ensures easy integration into circuit boards and offers good thermal performance.

Essence

The essence of the 23LCV1024T-E/ST is its ability to provide reliable and efficient non-volatile memory storage in electronic devices. It offers high-speed operation and low power consumption, making it suitable for a wide range of applications.

Packaging/Quantity

The 23LCV1024T-E/ST is typically packaged in reels or tubes, depending on the manufacturer's specifications. The quantity per package varies but is commonly available in quantities of 100 or more.

Specifications

• Memory Size: 1 Mbit (128 Kbytes)
• Interface: SPI (Serial Peripheral Interface)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 20 years
• Write Endurance: 1 million cycles

Detailed Pin Configuration

The 23LCV1024T-E/ST has a total of 8 pins, each serving a specific purpose:

1. Chip Select (CS): Enables communication with the device.
2. Serial Clock (SCK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Receives data from the microcontroller.
4. Serial Data Output (SO): Transmits data to the microcontroller.
5. Hold (HOLD): Suspends ongoing operations temporarily.
6. Write Protect (WP): Protects the memory from accidental writes.
7. VCC: Power supply input.
8. Ground (GND): Common ground reference.

Functional Features

• Byte and Page Write Operations: Allows writing data in individual bytes or larger page sizes.
• Sequential Read Operation: Facilitates efficient retrieval of consecutive data.
• Software Protection: Provides write protection through software commands.
• Hardware Protection: Utilizes the WP pin for hardware-based write protection.
• Low Power Standby Mode: Reduces power consumption when the device is not actively used.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even without power.
• High-speed operation enables fast read and write access.
• Low power consumption optimizes energy efficiency.
• Compact size allows for easy integration into various electronic devices.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit compared to traditional RAM.

Working Principles

The 23LCV1024T-E/ST utilizes the Serial Peripheral Interface (SPI) protocol to communicate with a microcontroller. It stores data in non-volatile memory cells, which retain their state even when power is removed. The device can be accessed for both read and write operations using the appropriate SPI commands.

Detailed Application Field Plans

The 23LCV1024T-E/ST finds applications in various electronic devices that require non-volatile memory storage. Some potential application fields include: - Embedded systems - Internet of Things (IoT) devices - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

1. 23LCV512T-E/ST: A lower capacity variant with 512 Kbits of memory.
2. 23LCV256T-E/ST: Another variant with 256 Kbits of memory, suitable for smaller-scale applications.
3. 23LCV2048T-E/ST: A higher capacity model with 2 Mbits of memory, offering increased storage capabilities.

These alternative models provide options with varying memory capacities to suit different application requirements.

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