DS1258Y-70IND# Encyclopedia Entry

Product Overview

Category: Integrated Circuits
Use: Data Storage
Characteristics: High-speed, non-volatile memory
Package: DIP (Dual In-line Package)
Essence: Non-volatile SRAM (Static Random Access Memory)
Packaging/Quantity: Individually packaged, quantity varies based on supplier

Specifications

• Model: DS1258Y-70IND#
• Operating Voltage: 3.0V to 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 70ns
• Memory Size: Varies based on specific model (e.g., 32Kb, 64Kb)
• Data Retention: Greater than 10 years
• Interface: Parallel

Detailed Pin Configuration

The DS1258Y-70IND# features a standard 28-pin DIP package with the following pin configuration:

1. Chip Enable (/CE)
2. Output Enable (/OE)
3. Write Enable (/WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. No Connection (NC)
8. No Connection (NC)
9. No Connection (NC)
10. No Connection (NC)
11. No Connection (NC)
12. No Connection (NC)
13. No Connection (NC)
14. No Connection (NC)
15. No Connection (NC)
16. No Connection (NC)
17. No Connection (NC)
18. No Connection (NC)
19. No Connection (NC)
20. No Connection (NC)
21. No Connection (NC)
22. No Connection (NC)
23. No Connection (NC)
24. No Connection (NC)
25. No Connection (NC)
26. Vcc (+3.0V to +3.6V)
27. No Connection (NC)
28. No Connection (NC)

Functional Features

• Non-volatile memory: Retains data even when power is disconnected
• High-speed access: 70ns access time allows for quick data retrieval
• Low power consumption: Operates within a wide voltage range with minimal power requirements
• Easy integration: Parallel interface simplifies connectivity with other devices

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data integrity during power interruptions - Fast access time enables efficient data retrieval - Wide operating temperature range makes it suitable for various environments - DIP package offers ease of use and compatibility with existing systems

Disadvantages: - Limited storage capacity compared to other modern memory technologies - Parallel interface may not be ideal for certain applications requiring serial communication

Working Principles

The DS1258Y-70IND# utilizes non-volatile SRAM technology, combining the speed of traditional SRAM with the ability to retain data without power. It achieves this by integrating a small battery or capacitor that provides backup power during power loss, allowing the memory to maintain its contents.

Detailed Application Field Plans

The DS1258Y-70IND# finds applications in various fields, including: 1. Industrial control systems 2. Automotive electronics 3. Medical equipment 4. Communication devices 5. Consumer electronics

Alternative Models

Several alternative models with similar functionality are available in the market, including: - DS1258AB-70IND# - DS1258Y-80IND# - DS1258Z-70IND#

These models offer different specifications and features, providing options to suit specific application requirements.

In conclusion, the DS1258Y-70IND# is a non-volatile SRAM integrated circuit designed for data storage applications. Its high-speed access, non-volatile nature, and easy integration make it suitable for various industries. However, its limited storage capacity and parallel interface may pose limitations in certain scenarios. Alternative models with different specifications are also available to cater to specific needs.