DS1230ABP-100

Product Overview

Category

The DS1230ABP-100 belongs to the category of non-volatile static random-access memory (NVSRAM).

Use

This product is commonly used as a storage device in various electronic systems, providing non-volatile memory capabilities.

Characteristics

• Non-volatile: The DS1230ABP-100 retains stored data even when power is removed.
• Static RAM: It offers fast read and write access times.
• High density: The DS1230ABP-100 provides a large storage capacity.
• Low power consumption: This product operates efficiently with minimal power requirements.

Package

The DS1230ABP-100 is typically packaged in a 32-pin DIP (Dual Inline Package) or a surface-mount SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of the DS1230ABP-100 lies in its ability to combine the benefits of both volatile and non-volatile memory technologies. It offers the speed and ease of use of static RAM, while also providing the non-volatility of an EEPROM (Electrically Erasable Programmable Read-Only Memory).

Packaging/Quantity

The DS1230ABP-100 is usually available in individual packages or in bulk quantities, depending on the supplier's offering.

Specifications

• Storage Capacity: 1 Megabit (128K x 8 bits)
• Supply Voltage: 4.5V to 5.5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Minimum 10 years

Detailed Pin Configuration

The DS1230ABP-100 has a total of 32 pins, each serving a specific function. The detailed pin configuration is as follows:

1. Chip Enable (/CE)
2. Output Enable (/OE)
3. Write Enable (/WE)
4. Address Inputs (A0-A16)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. VCC (+5V)
8. Not Connected (NC)

Functional Features

• Battery Backup: The DS1230ABP-100 includes an integrated lithium energy source, ensuring data retention during power loss.
• Automatic Store on Power Loss: This feature automatically saves the contents of the SRAM to non-volatile memory when power is lost.
• Software Write Protection: The DS1230ABP-100 offers write protection through software commands, preventing accidental modification of stored data.

Advantages and Disadvantages

Advantages

• Fast access times compared to traditional EEPROMs.
• Non-volatile storage capability ensures data integrity during power interruptions.
• High-density storage capacity.
• Low power consumption.

Disadvantages

• Relatively higher cost compared to standard static RAM.
• Limited endurance for write cycles compared to traditional EEPROMs.

Working Principles

The DS1230ABP-100 combines a static RAM array with a non-volatile EEPROM array. When power is applied, the device operates as a regular static RAM, allowing fast read and write operations. In the event of a power loss, the integrated lithium energy source powers the EEPROM array, automatically storing the contents of the SRAM into non-volatile memory.

Detailed Application Field Plans

The DS1230ABP-100 finds applications in various fields, including but not limited to: - Embedded systems - Industrial automation - Medical devices - Automotive electronics - Communication equipment

Detailed and Complete Alternative Models

1. DS1230Y-100+: Similar to DS1230ABP-100, but available in a surface-mount package.
2. DS1230ABP-120: Higher access time variant (120 ns) of DS1230ABP-100.
3. DS1230ABP-150: Lower access time variant (150 ns) of DS1230ABP-100.

These alternative models offer similar functionality and characteristics, providing options based on specific requirements.

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