DS1220AD-100IND

Product Overview

Category: Integrated Circuit (IC)

Use: The DS1220AD-100IND is a non-volatile static RAM (NVSRAM) integrated circuit. It combines the benefits of both RAM and non-volatile memory, providing high-speed read/write operations along with the ability to retain data even when power is lost.

Characteristics: - High-speed access time - Non-volatile storage - Low power consumption - Durable and reliable - Easy integration into existing systems

Package: The DS1220AD-100IND is available in a 24-pin dual in-line package (DIP), which ensures compatibility with various electronic devices.

Essence: The essence of the DS1220AD-100IND lies in its ability to store data reliably without the need for a continuous power supply. This makes it suitable for applications where data integrity is crucial, such as critical system configurations, data logging, and real-time clock backup.

Packaging/Quantity: Each DS1220AD-100IND unit is packaged individually and comes in a standard anti-static bag. The quantity per package depends on the supplier and customer requirements.

Specifications

• Access Time: 100ns
• Memory Size: 16Kb (2K x 8)
• Supply Voltage: 4.5V to 5.5V
• Standby Current: 100μA (typical)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: >10 years

Detailed Pin Configuration

The DS1220AD-100IND has a total of 24 pins, each serving a specific purpose. Here is the detailed pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A10)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. VCC (+5V)

Functional Features

• High-speed access: The DS1220AD-100IND offers fast read and write operations, allowing for efficient data handling in real-time applications.
• Non-volatile storage: The integrated non-volatile memory ensures that data remains intact even during power loss or system shutdowns.
• Low power consumption: The DS1220AD-100IND is designed to minimize power usage, making it suitable for battery-powered devices.
• Easy integration: With its standard pin configuration and compatibility with existing systems, the DS1220AD-100IND can be easily integrated into various electronic designs.

Advantages and Disadvantages

Advantages: - Reliable data retention - High-speed access - Low power consumption - Easy integration

Disadvantages: - Limited memory size (16Kb) - Relatively higher cost compared to traditional RAM

Working Principles

The DS1220AD-100IND utilizes a combination of volatile and non-volatile memory technologies. It employs a static RAM array for high-speed read/write operations and a built-in lithium energy source to maintain data integrity during power interruptions. When power is restored, the DS1220AD-100IND automatically transfers the stored data back to the SRAM array.

Detailed Application Field Plans

The DS1220AD-100IND finds application in various fields where reliable data storage and quick access are essential. Some potential application areas include:

1. Critical system configurations: The DS1220AD-100IND can store critical system parameters, ensuring their availability even after power failures.
2. Data logging: It can be used in data loggers to retain collected information when the device is powered off.
3. Real-time clock backup: The DS1220AD-100IND can serve as a backup power source for real-time clocks, ensuring accurate timekeeping during power outages.

Detailed and Complete Alternative Models

1. DS1220AB-100IND: Similar to the DS1220AD-100IND, but with a different package type (SOIC).
2. DS1230AB-100IND: Offers higher memory capacity (32Kb) while maintaining similar characteristics to the DS1220AD-100IND.
3. DS1245AB-100IND: Combines non-volatile RAM with additional EEPROM functionality, providing more flexibility in data storage and retrieval.

These alternative models offer similar features and can be considered based on specific application requirements.

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