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SPD04N80C3ATMA1

SPD04N80C3ATMA1

Product Overview

Category

The SPD04N80C3ATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-voltage switching applications in various electronic circuits and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SPD04N80C3ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 800V
  • Continuous Drain Current (ID): 4A
  • On-Resistance (RDS(on)): 0.8Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 12nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SPD04N80C3ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power losses and improves efficiency.
  • Fast switching speed enables rapid response in switching operations.

Advantages

  • Suitable for high-voltage applications
  • Low conduction losses
  • Fast switching speed

Disadvantages

  • Higher gate capacitance compared to some alternative models
  • Limited current handling capacity compared to higher-rated MOSFETs

Working Principles

The SPD04N80C3ATMA1 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SPD04N80C3ATMA1 is commonly used in the following applications: - Switching power supplies - Motor control - Inverters - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the SPD04N80C3ATMA1 include: - IRF840 - FDPF18N50 - STP16NF06L

In conclusion, the SPD04N80C3ATMA1 power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management applications. While it has advantages such as suitability for high-voltage applications and low conduction losses, it also has limitations in terms of gate capacitance and current handling capacity when compared to alternative models.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací SPD04N80C3ATMA1 v technických řešeních

  1. What is the maximum drain-source voltage of SPD04N80C3ATMA1?

    • The maximum drain-source voltage of SPD04N80C3ATMA1 is 800V.
  2. What is the continuous drain current rating of SPD04N80C3ATMA1?

    • The continuous drain current rating of SPD04N80C3ATMA1 is 4A.
  3. What is the on-resistance of SPD04N80C3ATMA1?

    • The on-resistance of SPD04N80C3ATMA1 is typically 0.65 ohms.
  4. Is SPD04N80C3ATMA1 suitable for high-frequency switching applications?

    • Yes, SPD04N80C3ATMA1 is suitable for high-frequency switching applications due to its low on-resistance and fast switching characteristics.
  5. What is the gate threshold voltage of SPD04N80C3ATMA1?

    • The gate threshold voltage of SPD04N80C3ATMA1 is typically 2.5V.
  6. Can SPD04N80C3ATMA1 be used in automotive applications?

    • Yes, SPD04N80C3ATMA1 is designed for automotive applications and meets the necessary standards and requirements.
  7. Does SPD04N80C3ATMA1 have built-in protection features?

    • SPD04N80C3ATMA1 has built-in protection features such as overcurrent protection and thermal shutdown to ensure safe operation.
  8. What is the operating temperature range of SPD04N80C3ATMA1?

    • The operating temperature range of SPD04N80C3ATMA1 is -55°C to 150°C.
  9. Is SPD04N80C3ATMA1 RoHS compliant?

    • Yes, SPD04N80C3ATMA1 is RoHS compliant, making it suitable for environmentally conscious designs.
  10. What are some typical applications for SPD04N80C3ATMA1?

    • Typical applications for SPD04N80C3ATMA1 include motor control, power supplies, and automotive systems.