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IRL2505STRR

IRL2505STRR

Product Overview

The IRL2505STRR belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification purposes. This MOSFET is characterized by its high current-carrying capability, low on-state resistance, and fast switching speed. It is typically packaged in a TO-263 package and is available in various quantities per package.

Basic Information

  • Category: Power MOSFET
  • Use: Switching and amplification in electronic circuits
  • Characteristics: High current-carrying capability, low on-state resistance, fast switching speed
  • Package: TO-263
  • Packaging/Quantity: Various quantities per package

Specifications

  • Voltage Rating: [Insert voltage rating]
  • Current Rating: [Insert current rating]
  • On-State Resistance: [Insert on-state resistance]
  • Gate Threshold Voltage: [Insert gate threshold voltage]

Detailed Pin Configuration

The IRL2505STRR follows the standard pin configuration for a TO-263 package: 1. Source (S): Connects to the source terminal of the MOSFET. 2. Gate (G): Connects to the gate terminal of the MOSFET. 3. Drain (D): Connects to the drain terminal of the MOSFET.

Functional Features

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Enhanced thermal performance

Advantages and Disadvantages

Advantages

  • Efficient power handling
  • Reduced power dissipation
  • Improved system reliability

Disadvantages

  • Sensitivity to static electricity
  • Gate drive considerations required for optimal performance

Working Principles

The IRL2505STRR operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a suitable voltage is applied to the gate terminal, the MOSFET allows current to flow between the source and drain terminals, effectively acting as a switch or amplifier in electronic circuits.

Detailed Application Field Plans

The IRL2505STRR finds extensive application in various fields, including: - Power supplies - Motor control - Audio amplifiers - LED lighting systems - Automotive electronics

Detailed and Complete Alternative Models

  • IRL2203
  • IRL3705
  • IRL540

In conclusion, the IRL2505STRR power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, with its efficient power handling and fast switching speed making it a popular choice among designers and engineers.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRL2505STRR v technických řešeních

  1. What is the maximum drain-source voltage of IRL2505STRR?

    • The maximum drain-source voltage of IRL2505STRR is 55V.
  2. What is the continuous drain current rating of IRL2505STRR?

    • The continuous drain current rating of IRL2505STRR is 57A.
  3. What is the on-state resistance (RDS(on)) of IRL2505STRR?

    • The on-state resistance (RDS(on)) of IRL2505STRR is typically 0.008 ohms.
  4. What is the gate threshold voltage of IRL2505STRR?

    • The gate threshold voltage of IRL2505STRR typically ranges from 2V to 4V.
  5. Can IRL2505STRR be used in automotive applications?

    • Yes, IRL2505STRR is suitable for use in automotive applications.
  6. What are some typical technical solutions where IRL2505STRR can be applied?

    • IRL2505STRR can be used in motor control, power supplies, DC-DC converters, and other high-current switching applications.
  7. Does IRL2505STRR have built-in protection features?

    • IRL2505STRR does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
  8. What is the operating temperature range of IRL2505STRR?

    • The operating temperature range of IRL2505STRR is typically -55°C to 175°C.
  9. Is IRL2505STRR RoHS compliant?

    • Yes, IRL2505STRR is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.
  10. What package type is IRL2505STRR available in?

    • IRL2505STRR is available in a TO-220AB package, which is a widely used through-hole package for power semiconductors.