IRFSL59N10D

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, converters, and motor control
Characteristics: High voltage, low on-resistance, fast switching speed
Package: TO-262
Essence: Power MOSFET for efficient power management
Packaging/Quantity: Tape & Reel, 800 units

Specifications

Voltage Rating: 100V
Continuous Drain Current: 59A
RDS(ON): 0.014Ω
Gate Threshold Voltage: 2-4V
Gate Charge: 50nC
Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

Gate (G)
Drain (D)
Source (S)

Functional Features

Low on-resistance for minimal power loss
Fast switching speed for improved efficiency
High voltage rating for versatile applications

Advantages and Disadvantages

Advantages: - Efficient power management - Versatile applications - Fast switching speed

Disadvantages: - Sensitive to static electricity - Higher cost compared to standard MOSFETs

Working Principles

The IRFSL59N10D operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow through, enabling efficient power switching.

Detailed Application Field Plans

Power Supplies: Utilized for high-efficiency power conversion.
Converters: Enables efficient voltage conversion in various electronic systems.
Motor Control: Facilitates precise and efficient motor control in industrial and automotive applications.

Detailed and Complete Alternative Models

IRFSL59N10: Similar specifications with a different package (TO-220AB).
IRFSL59N20D: Higher voltage rating and current capacity for more demanding applications.

This comprehensive entry provides an in-depth understanding of the IRFSL59N10D, covering its specifications, features, applications, and alternatives, making it a valuable resource for engineers and enthusiasts in the field of power electronics.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRFSL59N10D v technických řešeních

What is the IRFSL59N10D?
- The IRFSL59N10D is a power MOSFET designed for various technical solutions requiring high efficiency and reliability.
What are the key specifications of the IRFSL59N10D?
- The IRFSL59N10D features a Vds (drain-source voltage) of 100V, Id (continuous drain current) of 59A, and Rds(on) (on-state resistance) of 0.014 ohms.
In what applications can the IRFSL59N10D be used?
- This MOSFET is commonly used in applications such as motor control, power supplies, DC-DC converters, and electronic load switches.
What are the thermal characteristics of the IRFSL59N10D?
- The IRFSL59N10D has a junction-to-ambient thermal resistance of 40°C/W, allowing for efficient heat dissipation.
How does the IRFSL59N10D contribute to high efficiency in technical solutions?
- With its low on-state resistance and high current-carrying capability, the IRFSL59N10D minimizes power losses and enhances overall system efficiency.
What protection features does the IRFSL59N10D offer?
- The MOSFET provides built-in protection against overcurrent, overvoltage, and thermal overload, enhancing system reliability.
Can the IRFSL59N10D be used in automotive applications?
- Yes, the IRFSL59N10D is suitable for automotive applications due to its robust construction and ability to withstand harsh operating conditions.
What are the recommended operating conditions for the IRFSL59N10D?
- The MOSFET operates within a temperature range of -55°C to 175°C and requires appropriate gate drive voltage for optimal performance.
How does the IRFSL59N10D contribute to system miniaturization?
- Its high current-handling capability and low on-state resistance allow for the design of compact and efficient technical solutions.
Where can I find detailed application notes for using the IRFSL59N10D in technical solutions?
- Detailed application notes and technical resources for the IRFSL59N10D can be found on the manufacturer's website or through authorized distributors.