Infineon Technologies
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
IRF7807D1TRPBF
Zobrazit detail DataSheets

IRF7807D1TRPBF

Product Overview

Category

The IRF7807D1TRPBF belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power

Package

The IRF7807D1TRPBF is typically available in a DPAK (TO-252) package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 42A
  • RDS(ON) (Max) @ VGS = 10V: 6.5mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Total Power Dissipation (PD): 2.5W

Detailed Pin Configuration

The IRF7807D1TRPBF has a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low gate drive power required for switching
  • High current-carrying capability
  • Fast switching speed for efficient power control

Advantages and Disadvantages

Advantages

  • Low on-state resistance for reduced power loss
  • Suitable for high-current applications
  • Fast switching speed for improved efficiency

Disadvantages

  • May require heat sinking in high-power applications
  • Sensitivity to static electricity and overvoltage conditions

Working Principles

The IRF7807D1TRPBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET allows a high current to flow from the drain to the source with minimal resistance.

Detailed Application Field Plans

The IRF7807D1TRPBF is widely used in various applications, including: - Switching power supplies - Motor control - Battery management systems - LED lighting - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IRF7807D1TRPBF include: - IRF7832PBF - IRF7855PBF - IRF7862PBF

These alternatives offer similar performance characteristics and are suitable replacements for the IRF7807D1TRPBF in various applications.

In conclusion, the IRF7807D1TRPBF is a versatile power MOSFET with high current-carrying capability, low on-state resistance, and fast switching speed, making it an essential component in power management applications across various industries.

[Word count: 411]

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRF7807D1TRPBF v technických řešeních

  1. What is the IRF7807D1TRPBF?

    • The IRF7807D1TRPBF is a power MOSFET transistor designed for use in various technical solutions requiring high efficiency and low power dissipation.

  2. What are the key specifications of the IRF7807D1TRPBF?

    • The IRF7807D1TRPBF features a Vds (drain-source voltage) of 30V, Id (continuous drain current) of 42A, and Rds(on) (on-state resistance) of 8.5mΩ at Vgs of 10V.

  3. In what applications can the IRF7807D1TRPBF be used?

    • This MOSFET is commonly used in applications such as power supplies, motor control, and DC-DC converters due to its high efficiency and low on-state resistance.

  4. What is the maximum operating temperature of the IRF7807D1TRPBF?

    • The IRF7807D1TRPBF has a maximum operating temperature of 175°C, making it suitable for demanding industrial and automotive applications.

  5. How does the IRF7807D1TRPBF contribute to energy efficiency in technical solutions?

    • The low on-state resistance of the IRF7807D1TRPBF helps minimize power losses and improve overall energy efficiency in various electronic systems.

  6. What are the recommended mounting and soldering techniques for the IRF7807D1TRPBF?

    • Proper surface mount and reflow soldering techniques should be followed as per the manufacturer's guidelines to ensure reliable and robust connections.

  7. Does the IRF7807D1TRPBF require any specific gate driving considerations?

    • It is important to provide appropriate gate drive voltage and current to ensure efficient switching and performance of the IRF7807D1TRPBF in technical solutions.

  8. Are there any common failure modes associated with the IRF7807D1TRPBF?

    • Overheating due to excessive current or voltage stresses and inadequate heat dissipation are common factors leading to potential failure of the IRF7807D1TRPBF.

  9. Can the IRF7807D1TRPBF be used in parallel configurations for higher current handling?

    • Yes, the IRF7807D1TRPBF can be paralleled to increase current-handling capability, but proper attention should be given to current sharing and thermal management.

  10. Where can I find detailed application notes and reference designs using the IRF7807D1TRPBF?

    • Detailed application notes, reference designs, and technical support for the IRF7807D1TRPBF can be obtained from the manufacturer's website or through authorized distributors.