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IRF7453TR

IRF7453TR

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high current applications
Characteristics: High voltage, low on-resistance, fast switching speed
Package: D2PAK-3
Essence: Power MOSFET for efficient power management
Packaging/Quantity: Tape & Reel (2500 units per reel)

Specifications

  • Voltage Rating: 100V
  • Continuous Drain Current: 10A
  • RDS(ON): 20mΩ
  • Gate Threshold Voltage: 2V to 4V
  • Total Gate Charge: 15nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Fast switching speed for improved efficiency
  • Low on-resistance for reduced power dissipation
  • High voltage rating for versatile applications

Advantages

  • High voltage rating allows for use in a wide range of applications
  • Low on-resistance minimizes power loss and heat generation
  • Fast switching speed enhances overall system efficiency

Disadvantages

  • Higher gate threshold voltage compared to some alternative models
  • Limited continuous drain current compared to higher power MOSFETs

Working Principles

The IRF7453TR operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in high-power circuits. By modulating the voltage applied to the gate terminal, the device can efficiently switch between conducting and non-conducting states, enabling precise control over power flow.

Detailed Application Field Plans

The IRF7453TR is well-suited for various applications including: - Power supplies - Motor control systems - High current switching circuits

Detailed and Complete Alternative Models

  1. IRF7455TRPbF: Similar specifications with enhanced thermal performance
  2. IRF7460PbF: Higher continuous drain current and lower RDS(ON)
  3. IRF7468PbF: Lower gate threshold voltage and total gate charge

Note: The alternatives listed above are indicative and may vary based on specific application requirements.

This comprehensive entry provides an in-depth understanding of the IRF7453TR, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRF7453TR v technických řešeních

  1. What is the IRF7453TR?

    • The IRF7453TR is a dual N-channel power MOSFET designed for use in various technical solutions requiring high efficiency and low power dissipation.
  2. What is the maximum voltage and current rating of the IRF7453TR?

    • The IRF7453TR has a maximum voltage rating of 30V and a continuous drain current rating of 6.2A.
  3. What are the typical applications of the IRF7453TR?

    • Typical applications of the IRF7453TR include power management, load switching, battery protection, and DC-DC converters.
  4. What is the on-resistance of the IRF7453TR?

    • The on-resistance of the IRF7453TR is typically around 20mΩ.
  5. Is the IRF7453TR suitable for high-frequency switching applications?

    • Yes, the IRF7453TR is designed for high-speed switching applications due to its low gate charge and capacitance.
  6. Does the IRF7453TR require a heat sink for operation?

    • The need for a heat sink depends on the specific application and the power dissipation requirements. In some cases, a heat sink may be necessary.
  7. What are the thermal characteristics of the IRF7453TR?

    • The IRF7453TR has a junction-to-ambient thermal resistance of approximately 62°C/W.
  8. Can the IRF7453TR be used in automotive applications?

    • Yes, the IRF7453TR is suitable for automotive applications, including motor control and power distribution.
  9. Does the IRF7453TR have built-in ESD protection?

    • The IRF7453TR features robust ESD protection, making it suitable for applications where ESD events may occur.
  10. Are there any recommended layout considerations for using the IRF7453TR?

    • It is recommended to minimize the loop area of the high-current paths and provide adequate thermal vias for efficient heat dissipation when designing the layout for the IRF7453TR.