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IRF7326D2
Product Overview
Category
The IRF7326D2 belongs to the category of power MOSFETs.
Use
It is commonly used in electronic circuits for switching and amplification purposes.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
Package
The IRF7326D2 is typically available in a TO-252 package.
Essence
This MOSFET is essential for controlling high-power applications in various electronic devices.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 5.3A
- RDS(ON) (Max) @ VGS = 10V: 0.065Ω
- Gate-Source Voltage (VGS): ±20V
- Total Power Dissipation (PD): 2.5W
Detailed Pin Configuration
The IRF7326D2 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low gate charge
- Enhanced 30V VGS rating
- Improved resistance to thermal cycling
Advantages
- High voltage capability
- Low on-resistance leads to reduced power dissipation
- Fast switching speed allows for efficient operation
Disadvantages
- May require additional circuitry for overvoltage protection
- Sensitivity to electrostatic discharge (ESD) due to its high-performance characteristics
Working Principles
The IRF7326D2 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.
Detailed Application Field Plans
The IRF7326D2 finds application in various fields such as: - Power supplies - Motor control - LED lighting - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the IRF7326D2 include: - IRF7319 - IRF7341 - IRF7389
In conclusion, the IRF7326D2 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRF7326D2 v technických řešeních
What is the IRF7326D2?
- The IRF7326D2 is a dual N-channel MOSFET with a low on-resistance and high-speed switching capability, commonly used in power management applications.
What is the maximum drain-source voltage of the IRF7326D2?
- The maximum drain-source voltage of the IRF7326D2 is 30V.
What is the typical on-resistance of the IRF7326D2?
- The typical on-resistance of the IRF7326D2 is around 8mΩ.
What are the typical applications of the IRF7326D2?
- The IRF7326D2 is commonly used in battery protection circuits, load switches, power distribution systems, and other power management solutions.
What is the maximum continuous drain current of the IRF7326D2?
- The maximum continuous drain current of the IRF7326D2 is approximately 6.6A.
What is the operating temperature range of the IRF7326D2?
- The IRF7326D2 can operate within a temperature range of -55°C to 150°C.
Is the IRF7326D2 suitable for PWM (Pulse Width Modulation) applications?
- Yes, the IRF7326D2 is suitable for PWM applications due to its high-speed switching capability.
Does the IRF7326D2 require a heat sink for certain applications?
- Depending on the specific application and power dissipation requirements, a heat sink may be necessary for the IRF7326D2.
Can the IRF7326D2 be used in automotive applications?
- Yes, the IRF7326D2 is suitable for automotive applications, provided it meets the required specifications and standards.
What are the key advantages of using the IRF7326D2 in technical solutions?
- The key advantages of the IRF7326D2 include its low on-resistance, high-speed switching, compact size, and suitability for various power management applications.