Infineon Technologies
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
IRF6713STR1PBF
Zobrazit detail DataSheets

IRF6713STR1PBF

Product Overview

Category

The IRF6713STR1PBF belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power loss

Package

The IRF6713STR1PBF is available in a TO-263 package, which provides efficient heat dissipation.

Essence

This MOSFET is essential for controlling high-power circuits with minimal power loss.

Packaging/Quantity

It is typically supplied in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 39A
  • RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Total Power Dissipation (PD): 130W

Detailed Pin Configuration

The IRF6713STR1PBF features a standard pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-state resistance for efficient power transfer
  • Fast switching speed for improved performance
  • High current-carrying capability for robust power handling

Advantages

  • High efficiency in power management applications
  • Suitable for high-frequency switching
  • Enhanced thermal performance due to the TO-263 package

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The IRF6713STR1PBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in various applications, including: - Switched-mode power supplies - Motor control - Class D amplifiers - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

  1. IRF6723STR1PBF: Similar specifications with enhanced thermal performance
  2. IRF6733STR1PBF: Higher current-carrying capability with slightly higher on-state resistance
  3. IRF6743STR1PBF: Lower on-state resistance for ultra-low power loss applications

In conclusion, the IRF6713STR1PBF is a versatile power MOSFET that offers high efficiency and robust performance in various power management applications.

[Word count: 366]

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IRF6713STR1PBF v technických řešeních

  1. What is the IRF6713STR1PBF?

    • The IRF6713STR1PBF is a power MOSFET transistor designed for use in various technical solutions requiring high efficiency and reliability.

  2. What is the maximum voltage and current rating of the IRF6713STR1PBF?

    • The IRF6713STR1PBF has a maximum voltage rating of 30V and a continuous drain current rating of 39A.

  3. What are the typical applications of the IRF6713STR1PBF?

    • Typical applications include synchronous rectification, motor control, DC-DC converters, and other power management solutions.

  4. What is the on-state resistance (RDS(on)) of the IRF6713STR1PBF?

    • The typical on-state resistance of the IRF6713STR1PBF is 2.5mΩ at VGS = 10V.

  5. Is the IRF6713STR1PBF suitable for high-frequency switching applications?

    • Yes, the IRF6713STR1PBF is designed for high-frequency switching due to its low gate charge and fast switching characteristics.

  6. Does the IRF6713STR1PBF require a heatsink for operation?

    • It is recommended to use a heatsink for the IRF6713STR1PBF in high-power applications to ensure optimal thermal performance.

  7. What is the operating temperature range of the IRF6713STR1PBF?

    • The IRF6713STR1PBF can operate within a temperature range of -55°C to 175°C.

  8. Can the IRF6713STR1PBF be used in automotive applications?

    • Yes, the IRF6713STR1PBF is suitable for automotive applications due to its rugged construction and high reliability.

  9. What are the key advantages of using the IRF6713STR1PBF in technical solutions?

    • Some key advantages include low RDS(on), high current capability, fast switching speed, and high efficiency.

  10. Are there any specific layout considerations when using the IRF6713STR1PBF in a circuit?

    • It is important to minimize parasitic inductance and ensure proper gate driving to maximize the performance of the IRF6713STR1PBF in a circuit.