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IPW65R080CFDAFKSA1
Product Overview
Category
The IPW65R080CFDAFKSA1 belongs to the category of power MOSFETs.
Use
It is commonly used in electronic circuits for switching and amplification purposes.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPW65R080CFDAFKSA1 is typically available in a TO-247 package.
Essence
This MOSFET is essential for efficient power management in various electronic applications.
Packaging/Quantity
It is usually packaged individually and sold in quantities suitable for production or prototyping needs.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 50A
- On-Resistance (RDS(on)): 0.08Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IPW65R080CFDAFKSA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows for use in high-power applications.
- Low on-resistance minimizes power loss and heat generation.
- Fast switching speed enables efficient operation in switching circuits.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low on-resistance for improved efficiency
- Fast switching speed for enhanced performance
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- Requires careful handling due to its high voltage rating
Working Principles
The IPW65R080CFDAFKSA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The IPW65R080CFDAFKSA1 is widely used in: - Switch-mode power supplies - Motor control systems - Inverters for renewable energy applications - Electric vehicle powertrains
Detailed and Complete Alternative Models
Some alternative models to the IPW65R080CFDAFKSA1 include: - IPW60R190C6 - IPW60R099C6 - IPW60R041C6
In conclusion, the IPW65R080CFDAFKSA1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPW65R080CFDAFKSA1 v technických řešeních
What is the maximum drain current of IPW65R080CFDAFKSA1?
- The maximum drain current of IPW65R080CFDAFKSA1 is 120A.
What is the typical on-state resistance of IPW65R080CFDAFKSA1?
- The typical on-state resistance of IPW65R080CFDAFKSA1 is 0.08 ohms.
What is the gate-source voltage of IPW65R080CFDAFKSA1?
- The gate-source voltage of IPW65R080CFDAFKSA1 is ±20V.
What is the power dissipation of IPW65R080CFDAFKSA1?
- The power dissipation of IPW65R080CFDAFKSA1 is 300W.
What are the typical applications for IPW65R080CFDAFKSA1?
- IPW65R080CFDAFKSA1 is commonly used in motor control, solar inverters, and welding equipment.
What is the operating temperature range of IPW65R080CFDAFKSA1?
- The operating temperature range of IPW65R080CFDAFKSA1 is -55°C to 150°C.
Does IPW65R080CFDAFKSA1 have built-in protection features?
- Yes, IPW65R080CFDAFKSA1 has built-in overcurrent protection and thermal shutdown features.
What is the input capacitance of IPW65R080CFDAFKSA1?
- The input capacitance of IPW65R080CFDAFKSA1 is 5200pF.
Is IPW65R080CFDAFKSA1 suitable for high-frequency switching applications?
- Yes, IPW65R080CFDAFKSA1 is suitable for high-frequency switching due to its low on-state resistance.
What are the recommended mounting techniques for IPW65R080CFDAFKSA1?
- IPW65R080CFDAFKSA1 is best mounted using through-hole or surface-mount techniques, following the recommended PCB layout guidelines for optimal performance.