IPI120N04S402AKSA1

Introduction

The IPI120N04S402AKSA1 is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The IPI120N04S402AKSA1 is commonly used in power supply circuits, motor control, and other high-power applications.
• Characteristics: It is known for its low on-state resistance, high switching speed, and high efficiency.
• Package: The MOSFET is typically available in a TO-220 package.
• Essence: The essence of the IPI120N04S402AKSA1 lies in its ability to efficiently control high power loads with minimal losses.
• Packaging/Quantity: It is usually packaged individually and sold in quantities suitable for production or prototyping purposes.

Specifications

The IPI120N04S402AKSA1 MOSFET has the following key specifications: - Drain-Source Voltage (VDS): 40V - Continuous Drain Current (ID): 120A - On-State Resistance (RDS(on)): 4mΩ - Gate-Source Voltage (VGS): ±20V - Total Gate Charge (Qg): 150nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The pin configuration of the IPI120N04S402AKSA1 is as follows: - Pin 1: Gate (G) - Pin 2: Drain (D) - Pin 3: Source (S)

Functional Features

• High Current Handling: Capable of handling continuous drain currents of up to 120A.
• Low On-State Resistance: The low RDS(on) value ensures minimal conduction losses.
• Fast Switching Speed: Enables efficient control of switching operations in power electronics applications.

Advantages and Disadvantages

Advantages

• High current-carrying capability
• Low on-state resistance for reduced power dissipation
• Fast switching speed for improved efficiency

Disadvantages

• Higher gate drive requirements compared to some lower power MOSFETs
• Larger physical size due to higher current handling capacity

Working Principles

The IPI120N04S402AKSA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can effectively switch high currents with minimal losses.

Detailed Application Field Plans

The IPI120N04S402AKSA1 finds extensive use in various applications, including: - Power supply units - Motor control systems - Inverter circuits - High-power LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IPI120N04S402AKSA1 include: - IRF1405 - FDP8870 - STP80NF70

In conclusion, the IPI120N04S402AKSA1 is a versatile power MOSFET with high current-handling capabilities, low on-state resistance, and fast switching speeds. Its application spans across diverse fields, making it a crucial component in high-power electronic systems.

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