IPI076N12N3GAKSA1

Introduction

The IPI076N12N3GAKSA1 is a power MOSFET belonging to the category of electronic components. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The IPI076N12N3GAKSA1 is commonly used in power supply applications, motor control, and other high-power switching circuits.
• Characteristics: It is known for its high current-carrying capability, low on-state resistance, and fast switching speed.
• Package: The IPI076N12N3GAKSA1 is typically available in a TO-262 package.
• Essence: Its essence lies in providing efficient and reliable power switching capabilities.
• Packaging/Quantity: It is usually supplied in reels or tubes with varying quantities based on manufacturer specifications.

Specifications

• Voltage Rating: 120V
• Current Rating: 76A
• On-State Resistance: 6.7mΩ
• Gate Charge: 45nC
• Operating Temperature Range: -55°C to 175°C
• Package Type: TO-262

Detailed Pin Configuration

The IPI076N12N3GAKSA1 typically follows the standard pin configuration for power MOSFETs, with the gate, drain, and source pins clearly labeled and positioned according to industry standards.

Functional Features

• High Current-Carrying Capability: The MOSFET can handle high currents, making it suitable for power applications.
• Low On-State Resistance: This feature minimizes power losses and improves efficiency.
• Fast Switching Speed: The fast switching characteristics enable rapid response in switching applications.

Advantages and Disadvantages

Advantages

• High current-handling capacity
• Low on-state resistance
• Fast switching speed
• Suitable for high-power applications

Disadvantages

• Higher cost compared to lower-rated MOSFETs
• May require additional heat dissipation measures in high-power applications

Working Principles

The IPI076N12N3GAKSA1 operates based on the principles of metal-oxide-semiconductor field-effect transistors (MOSFETs). When a voltage is applied to the gate terminal, it controls the flow of current between the drain and source terminals, allowing for efficient power switching.

Detailed Application Field Plans

The IPI076N12N3GAKSA1 finds extensive use in various applications, including: - Power supplies - Motor control systems - High-power switching circuits - Inverters and converters - Automotive electronics

Detailed and Complete Alternative Models

• IPI060N12N3G: Similar specifications with a slightly lower current rating
• IPI110N20N3G: Higher voltage and current ratings for more demanding applications
• IRF3205: A widely used alternative with comparable characteristics

In conclusion, the IPI076N12N3GAKSA1 is a versatile power MOSFET with high current-carrying capability, low on-state resistance, and fast switching speed, making it suitable for a wide range of power applications.

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