IPD80R1K4P7ATMA1

Introduction

The IPD80R1K4P7ATMA1 is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Electronic Component
• Use: Power MOSFET for electronic circuits
• Characteristics: High power handling capacity, low on-state resistance, fast switching speed
• Package: TO-252-3 (DPAK)
• Essence: Efficient power management
• Packaging/Quantity: Typically packaged in reels of 2500 units

Specifications

• Voltage Rating: 80V
• Current Rating: 100A
• On-State Resistance: 1.4mΩ
• Gate Threshold Voltage: 2V
• Maximum Power Dissipation: 75W
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

1. Source (S)
2. Gate (G)
3. Drain (D)

Functional Features

• High current-carrying capability
• Low conduction losses
• Fast switching speed
• Enhanced thermal performance

Advantages

• Efficient power management
• Suitable for high-power applications
• Low on-state resistance reduces power dissipation
• Fast switching speed minimizes switching losses

Disadvantages

• Sensitive to voltage spikes
• Requires careful handling during assembly due to ESD sensitivity

Working Principles

The IPD80R1K4P7ATMA1 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the source and drain terminals. When a sufficient gate voltage is applied, the MOSFET allows a high current to pass through with minimal resistance, enabling efficient power control in electronic circuits.

Detailed Application Field Plans

The IPD80R1K4P7ATMA1 is commonly used in: - Switch-mode power supplies - Motor control circuits - Automotive electronic systems - Industrial automation equipment

Detailed and Complete Alternative Models

• IPD60R1K4P7S7ATMA1
• IPD100R1K4P7ATMA1
• IPD80R1K4P7S7ATMA1
• IPD80R1K4P7ATM

In conclusion, the IPD80R1K4P7ATMA1 is a versatile power MOSFET with high current-carrying capacity, low on-state resistance, and fast switching speed. Its efficient power management capabilities make it suitable for a wide range of high-power electronic applications.

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