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IPD70N03S4L04ATMA1
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IPD70N03S4L04ATMA1

Product Overview

Category

The IPD70N03S4L04ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPD70N03S4L04ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 70A
  • RDS(ON) (Max) @ VGS = 10V: 4.4 mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Total Power Dissipation (PD): 130W

Detailed Pin Configuration

The IPD70N03S4L04ATMA1 has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

  • Low on-resistance for minimal power loss
  • High current-carrying capability
  • Fast switching speed for improved efficiency
  • Robust construction for reliability in demanding applications

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Suitable for high-power applications

Disadvantages

  • May require careful handling due to sensitivity to electrostatic discharge
  • Higher cost compared to standard MOSFETs

Working Principles

The IPD70N03S4L04ATMA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

The IPD70N03S4L04ATMA1 is widely used in: - Switching power supplies - Motor control systems - Battery management systems - LED lighting applications - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IPD70N03S4L04ATMA1 include: - IRF3709ZPBF - FDP8870 - AOD4184A

In conclusion, the IPD70N03S4L04ATMA1 is a high-performance power MOSFET with versatile applications in various electronic systems, offering efficient power management and reliable operation.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPD70N03S4L04ATMA1 v technických řešeních

  1. What is the maximum drain-source voltage of IPD70N03S4L04ATMA1?

    • The maximum drain-source voltage of IPD70N03S4L04ATMA1 is 30V.

  2. What is the continuous drain current rating of IPD70N03S4L04ATMA1?

    • The continuous drain current rating of IPD70N03S4L04ATMA1 is 70A.

  3. What is the on-state resistance (RDS(on)) of IPD70N03S4L04ATMA1?

    • The on-state resistance (RDS(on)) of IPD70N03S4L04ATMA1 is typically 4mΩ at VGS = 10V.

  4. Can IPD70N03S4L04ATMA1 be used in automotive applications?

    • Yes, IPD70N03S4L04ATMA1 is designed for use in automotive applications.

  5. What is the operating temperature range of IPD70N03S4L04ATMA1?

    • The operating temperature range of IPD70N03S4L04ATMA1 is -55°C to 175°C.

  6. Is IPD70N03S4L04ATMA1 suitable for high-frequency switching applications?

    • Yes, IPD70N03S4L04ATMA1 is suitable for high-frequency switching applications.

  7. Does IPD70N03S4L04ATMA1 have built-in ESD protection?

    • Yes, IPD70N03S4L04ATMA1 features built-in ESD protection.

  8. What package type does IPD70N03S4L04ATMA1 come in?

    • IPD70N03S4L04ATMA1 is available in a TO-252-3 package.

  9. What gate-source voltage (VGS) is required for proper operation of IPD70N03S4L04ATMA1?

    • The recommended gate-source voltage (VGS) for IPD70N03S4L04ATMA1 is typically 10V.

  10. Is IPD70N03S4L04ATMA1 RoHS compliant?

    • Yes, IPD70N03S4L04ATMA1 is RoHS compliant.