IPD65R1K4CFDATMA1

Product Overview

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The IPD65R1K4CFDATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

Drain-Source Voltage (VDS): 650V
Continuous Drain Current (ID): 6.5A
On-Resistance (RDS(on)): 1.4Ω
Power Dissipation (PD): 48W
Gate-Source Voltage (VGS): ±20V
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IPD65R1K4CFDATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

High voltage capability allows for use in various power supply applications.
Low on-resistance minimizes power loss and improves efficiency.
Fast switching speed enables rapid response in switching applications.

Advantages

Suitable for high voltage applications
Low power dissipation
Enhanced efficiency in power management systems

Disadvantages

Limited continuous drain current compared to higher-rated MOSFETs
May require additional circuitry for certain applications due to its specific characteristics

Working Principles

The IPD65R1K4CFDATMA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

This MOSFET is widely used in: - Switching power supplies - Motor control systems - LED lighting applications - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

IPD60R1K4C6 - Similar specifications with lower on-resistance
IPD70R1K4C6 - Higher voltage capability with comparable on-resistance
IPD80R1K4C6 - Higher continuous drain current with slightly higher on-resistance

In conclusion, the IPD65R1K4CFDATMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPD65R1K4CFDATMA1 v technických řešeních

What is the maximum drain-source voltage of IPD65R1K4CFDATMA1?
- The maximum drain-source voltage of IPD65R1K4CFDATMA1 is 650V.
What is the typical on-state resistance of IPD65R1K4CFDATMA1?
- The typical on-state resistance of IPD65R1K4CFDATMA1 is 1.4 Ohms.
What is the maximum continuous drain current of IPD65R1K4CFDATMA1?
- The maximum continuous drain current of IPD65R1K4CFDATMA1 is 6.5A.
Can IPD65R1K4CFDATMA1 be used in high-frequency applications?
- Yes, IPD65R1K4CFDATMA1 is suitable for high-frequency applications due to its low on-state resistance and fast switching characteristics.
Does IPD65R1K4CFDATMA1 require a heatsink for thermal management?
- It is recommended to use a heatsink for thermal management, especially in high-power or high-temperature applications.
What are the typical applications for IPD65R1K4CFDATMA1?
- IPD65R1K4CFDATMA1 is commonly used in power supplies, motor control, lighting, and other industrial applications.
Is IPD65R1K4CFDATMA1 suitable for automotive applications?
- Yes, IPD65R1K4CFDATMA1 is designed to meet the requirements of automotive applications, including AEC-Q101 qualification.
What is the gate charge of IPD65R1K4CFDATMA1?
- The gate charge of IPD65R1K4CFDATMA1 is typically 13nC.
Does IPD65R1K4CFDATMA1 have built-in ESD protection?
- Yes, IPD65R1K4CFDATMA1 features built-in ESD protection, enhancing its robustness in real-world operating conditions.
Are there any application notes or reference designs available for using IPD65R1K4CFDATMA1 in technical solutions?
- Yes, Infineon provides application notes and reference designs to assist engineers in implementing IPD65R1K4CFDATMA1 in various technical solutions.