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IPD60R385CPBTMA1

IPD60R385CPBTMA1

Product Overview

  • Category: Power MOSFET
  • Use: This MOSFET is used for power management applications in various electronic devices and systems.
  • Characteristics: High efficiency, low on-resistance, fast switching speed, and low gate charge.
  • Package: TO-252-3 (DPAK)
  • Essence: The essence of this product lies in its ability to efficiently manage power in electronic circuits.
  • Packaging/Quantity: Available in reels with a quantity of 2500 units.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 9.5A
  • On-Resistance: 385mΩ
  • Package Type: DPAK
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Functional Features

  • Fast switching speed
  • Low gate charge
  • Low on-resistance
  • High efficiency power management

Advantages

  • Efficient power management
  • Fast switching speed
  • Low on-resistance

Disadvantages

  • Limited current rating compared to higher power MOSFETs
  • Sensitive to voltage spikes

Working Principles

The IPD60R385CPBTMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow through it, enabling efficient power management.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - Switching power supplies - Motor control - LED lighting - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

  • IPD60R385CPA: Similar specifications with a different package type (TO-220)
  • IPD60R380E6: Lower on-resistance with similar voltage and current ratings
  • IPD60R450E6: Higher current rating with slightly higher on-resistance

Note: The alternative models listed above are for reference purposes and may have differences in performance and package type.


This content provides a comprehensive overview of the IPD60R385CPBTMA1 Power MOSFET, covering its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPD60R385CPBTMA1 v technických řešeních

  1. What is the maximum drain current of IPD60R385CPBTMA1?

    • The maximum drain current of IPD60R385CPBTMA1 is 24A.
  2. What is the typical on-state resistance of IPD60R385CPBTMA1?

    • The typical on-state resistance of IPD60R385CPBTMA1 is 38mΩ.
  3. What is the gate threshold voltage of IPD60R385CPBTMA1?

    • The gate threshold voltage of IPD60R385CPBTMA1 is typically 2.5V.
  4. What is the maximum power dissipation of IPD60R385CPBTMA1?

    • The maximum power dissipation of IPD60R385CPBTMA1 is 150W.
  5. What are the recommended operating temperature range for IPD60R385CPBTMA1?

    • The recommended operating temperature range for IPD60R385CPBTMA1 is -55°C to 150°C.
  6. Is IPD60R385CPBTMA1 suitable for automotive applications?

    • Yes, IPD60R385CPBTMA1 is suitable for automotive applications.
  7. What is the gate charge of IPD60R385CPBTMA1?

    • The gate charge of IPD60R385CPBTMA1 is typically 17nC.
  8. Does IPD60R385CPBTMA1 have built-in ESD protection?

    • Yes, IPD60R385CPBTMA1 has built-in ESD protection.
  9. What is the package type of IPD60R385CPBTMA1?

    • IPD60R385CPBTMA1 comes in a TO-252-3 package.
  10. What are some common applications for IPD60R385CPBTMA1?

    • Common applications for IPD60R385CPBTMA1 include motor control, power supplies, and automotive systems.