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IPD60R1K0CEAUMA1

IPD60R1K0CEAUMA1

Product Overview

Category

The IPD60R1K0CEAUMA1 belongs to the category of power MOSFETs.

Use

It is used as a power semiconductor device for switching and amplifying electronic signals in various applications.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The IPD60R1K0CEAUMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 6.1A
  • RDS(ON): 1.0 Ohm
  • Package Type: TO-252
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD60R1K0CEAUMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low input and output capacitance for improved switching performance
  • High voltage capability for versatile application usage
  • Fast switching speed for efficient power management

Advantages

  • High voltage rating allows for use in a wide range of applications
  • Low on-resistance minimizes power loss and heat generation
  • Fast switching speed enables high-frequency operation

Disadvantages

  • Higher cost compared to standard MOSFETs with lower specifications
  • Sensitive to static electricity and voltage spikes, requiring careful handling and protection during installation

Working Principles

The IPD60R1K0CEAUMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPD60R1K0CEAUMA1 is widely used in: - Switching power supplies - Motor control systems - LED lighting applications - Solar inverters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IPD60R1K0CEAUMA1 include: - IPD60R1K0C7ATMA1 - IPD60R1K0C3ATMA1 - IPD60R1K0C5ATMA1

In conclusion, the IPD60R1K0CEAUMA1 is a high-performance power MOSFET with a range of applications in power electronics and control systems. Its unique combination of high voltage capability, low on-resistance, and fast switching speed makes it an ideal choice for various demanding applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPD60R1K0CEAUMA1 v technických řešeních

  1. What is the maximum drain current of IPD60R1K0CEAUMA1?

    • The maximum drain current of IPD60R1K0CEAUMA1 is 60A.
  2. What is the voltage rating of IPD60R1K0CEAUMA1?

    • The voltage rating of IPD60R1K0CEAUMA1 is 100V.
  3. What is the on-resistance of IPD60R1K0CEAUMA1?

    • The on-resistance of IPD60R1K0CEAUMA1 is 1.0 mΩ.
  4. What type of package does IPD60R1K0CEAUMA1 come in?

    • IPD60R1K0CEAUMA1 comes in a standard TO-252 package.
  5. Is IPD60R1K0CEAUMA1 suitable for automotive applications?

    • Yes, IPD60R1K0CEAUMA1 is designed for automotive applications.
  6. What is the thermal resistance of IPD60R1K0CEAUMA1?

    • The thermal resistance of IPD60R1K0CEAUMA1 is 1.1°C/W.
  7. Does IPD60R1K0CEAUMA1 have built-in protection features?

    • Yes, IPD60R1K0CEAUMA1 has built-in overcurrent and overtemperature protection.
  8. Can IPD60R1K0CEAUMA1 be used in high-frequency switching applications?

    • Yes, IPD60R1K0CEAUMA1 is suitable for high-frequency switching applications.
  9. What is the gate charge of IPD60R1K0CEAUMA1?

    • The gate charge of IPD60R1K0CEAUMA1 is typically 25nC.
  10. Is IPD60R1K0CEAUMA1 RoHS compliant?

    • Yes, IPD60R1K0CEAUMA1 is RoHS compliant.