IPD60R180C7ATMA1

Introduction

The IPD60R180C7ATMA1 is a power MOSFET belonging to the category of electronic components. It is widely used in various applications due to its unique characteristics and functional features. This entry provides an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The IPD60R180C7ATMA1 is commonly used as a switching device in power supply circuits, motor control, and other electronic applications.
• Characteristics: This MOSFET offers low on-resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The IPD60R180C7ATMA1 is typically available in a TO-252-3 package.
• Essence: Its essence lies in providing efficient power switching capabilities in electronic circuits.
• Packaging/Quantity: The product is usually packaged in reels or tubes containing multiple units.

Specifications

The IPD60R180C7ATMA1 has the following key specifications: - Drain-Source Voltage (V_DSS): 600V - Continuous Drain Current (I_D): 6A - On-Resistance (R_DS(on)): 180mΩ - Total Gate Charge (Q_G): 18nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IPD60R180C7ATMA1 features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

| Pin Name | Description | |----------|-------------| | G | Gate terminal for controlling the MOSFET | | D | Drain terminal connected to the load | | S | Source terminal connected to the ground |

Functional Features

• High Efficiency: The MOSFET's low on-resistance and gate charge contribute to high efficiency in power conversion applications.
• Fast Switching Speed: It offers rapid switching characteristics, enabling quick response in switching operations.
• Low Power Dissipation: The device minimizes power loss during operation, enhancing overall system efficiency.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion
• Fast switching speed
• Low power dissipation

Disadvantages

• Sensitivity to voltage spikes
• Potential for thermal issues at high currents

Working Principles

The IPD60R180C7ATMA1 operates based on the principle of field-effect transistors. When a sufficient voltage is applied to the gate terminal, it creates an electric field that allows current to flow between the drain and source terminals, effectively controlling the power flow in the circuit.

Detailed Application Field Plans

The IPD60R180C7ATMA1 finds extensive use in the following application fields: - Switched-mode power supplies - Motor control systems - Inverters and converters for renewable energy systems - Electronic lighting ballasts

Detailed and Complete Alternative Models

Some alternative models to the IPD60R180C7ATMA1 include: - IRF3205 - FDP8878 - STP80NF55-06

These alternatives offer similar performance and characteristics, providing flexibility in design and sourcing options for electronic applications.

In conclusion, the IPD60R180C7ATMA1 power MOSFET serves as a crucial component in various electronic systems, offering high efficiency, fast switching, and reliable power control capabilities. Its specifications, functional features, and application versatility make it a valuable choice for engineers and designers seeking efficient power management solutions.

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