IPD50R800CEAUMA1

Product Overview

Use

It is used as a power semiconductor device for switching and amplifying electronic signals in various applications.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge
Avalanche energy specified
Improved dv/dt capability

Package

The IPD50R800CEAUMA1 is typically available in a TO-252-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

Voltage Rating: 800V
Continuous Drain Current: 5.6A
On-Resistance: 0.8Ω
Gate-Source Voltage (Max): ±30V
Total Gate Charge: 15nC
Avalanche Energy: 2.5mJ
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IPD50R800CEAUMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High voltage capability allows for use in various power applications.
Low on-resistance minimizes power loss and improves efficiency.
Fast switching speed enables rapid response in switching applications.
Low gate charge reduces drive requirements and enhances performance.
Avalanche energy specification ensures reliability in high-energy transient events.
Improved dv/dt capability supports robustness in demanding environments.

Advantages and Disadvantages

Advantages

High voltage capability suitable for diverse applications
Low on-resistance for improved efficiency
Fast switching speed for responsive operation
Low gate charge for enhanced performance
Robust avalanche energy specification for reliability
Improved dv/dt capability for demanding environments

Disadvantages

May not be suitable for low-voltage applications
Higher cost compared to standard MOSFETs with lower specifications

Working Principles

The IPD50R800CEAUMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPD50R800CEAUMA1 is widely used in the following applications: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the IPD50R800CEAUMA1 include: - IPD50R800CPAUMA1 - IPD50R800CXAUMA1 - IPD50R800CEXKMA1 - IPD50R800CEXKMA2

In conclusion, the IPD50R800CEAUMA1 is a high-voltage power MOSFET with characteristics that make it suitable for various power management and control applications. Its specifications, functional features, advantages, and application field plans demonstrate its versatility and importance in modern electronic systems.

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