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IPD30N06S4L23ATMA2
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IPD30N06S4L23ATMA2

Product Overview

Category

The IPD30N06S4L23ATMA2 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications such as voltage regulation and switching circuits.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive requirements

Package

The IPD30N06S4L23ATMA2 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels containing a specific quantity, typically 250 or 500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 30A
  • RDS(ON) (Max) @ VGS = 10V: 0.023Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Power Dissipation (PD): 88W

Detailed Pin Configuration

The IPD30N06S4L23ATMA2 has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

  • Low on-state resistance for minimal power loss
  • High current-carrying capability
  • Fast switching characteristics for efficient operation
  • Robust construction for reliability in demanding applications

Advantages

  • Efficient power handling
  • Reduced heat dissipation
  • Suitable for high-frequency applications
  • Compact form factor

Disadvantages

  • Higher cost compared to traditional power transistors
  • Sensitivity to electrostatic discharge (ESD)

Working Principles

The IPD30N06S4L23ATMA2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

This MOSFET is widely used in various applications including: - Switching power supplies - Motor control - LED lighting - Battery management systems - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IPD30N06S4L23ATMA2 include: - IRF3205 - FDP8878 - STP55NF06L

In conclusion, the IPD30N06S4L23ATMA2 is a versatile power MOSFET with high performance and reliability, making it suitable for a wide range of power management applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPD30N06S4L23ATMA2 v technických řešeních

  1. What is the maximum drain-source voltage of IPD30N06S4L23ATMA2?

    • The maximum drain-source voltage is 60V.

  2. What is the continuous drain current rating of IPD30N06S4L23ATMA2?

    • The continuous drain current rating is 30A.

  3. What is the on-state resistance (RDS(on)) of IPD30N06S4L23ATMA2?

    • The on-state resistance is typically 0.023 ohms.

  4. Can IPD30N06S4L23ATMA2 be used in automotive applications?

    • Yes, it is designed for automotive applications.

  5. What is the operating temperature range of IPD30N06S4L23ATMA2?

    • The operating temperature range is -55°C to 175°C.

  6. Does IPD30N06S4L23ATMA2 have built-in ESD protection?

    • Yes, it has built-in ESD protection.

  7. What type of package does IPD30N06S4L23ATMA2 come in?

    • It comes in a TO-252-3 package.

  8. Is IPD30N06S4L23ATMA2 suitable for high-frequency switching applications?

    • Yes, it is suitable for high-frequency switching applications.

  9. What gate-source voltage is required to fully enhance IPD30N06S4L23ATMA2?

    • A gate-source voltage of 10V is required for full enhancement.

  10. Can IPD30N06S4L23ATMA2 be used in power management solutions?

    • Yes, it is commonly used in power management solutions.