IPD30N03S2L20ATMA1

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: Low on-resistance, high current capability, low gate charge
• Package: TO-252-3 (DPAK)
• Essence: Efficient power management
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Drain-Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 30A
• Rds(on) (Max) @ Vgs = 10V: 8.5mΩ
• Gate-Source Threshold Voltage (Vgs(th)): 2V to 4V
• Total Gate Charge (Qg): 18nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

• Pin 1 (G): Gate
• Pin 2 (D): Drain
• Pin 3 (S): Source

Functional Features

• Low on-resistance for efficient power management
• High current capability for robust performance
• Low gate charge for fast switching

Advantages and Disadvantages

Advantages

• Efficient power management
• Robust performance in high-current applications
• Fast switching speed

Disadvantages

• Higher gate threshold voltage compared to some alternatives
• Limited voltage tolerance compared to higher-rated MOSFETs

Working Principles

The IPD30N03S2L20ATMA1 operates based on the principles of field-effect transistors, utilizing its low on-resistance and high current capability to efficiently switch power in various applications.

Detailed Application Field Plans

The IPD30N03S2L20ATMA1 is suitable for a wide range of power switching applications, including: - Motor control systems - Power supplies - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

• IPD60R190P6: Higher voltage rating (60V) with similar characteristics
• IPD50N06S4-08: Lower on-resistance (5mΩ) with slightly higher gate charge

This completes the entry for IPD30N03S2L20ATMA1, covering its product details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Word Count: 314