IPD100N04S402ATMA1

Introduction

The IPD100N04S402ATMA1 is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

Category: Power MOSFET
Use: The IPD100N04S402ATMA1 is used as a switching device in power electronics applications.
Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
Package: The IPD100N04S402ATMA1 is typically available in a TO-252 package.
Essence: It serves as a crucial component in power supply circuits and motor control applications.
Packaging/Quantity: It is commonly packaged in reels containing a specific quantity based on manufacturer specifications.

Specifications

Voltage Rating: 40V
Current Rating: 100A
On-State Resistance: 4mΩ
Gate-Source Voltage (Max): ±20V
Package Type: TO-252
Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD100N04S402ATMA1 typically has three pins: 1. Gate (G): Input pin for controlling the switching operation. 2. Drain (D): Output pin connected to the load or power supply. 3. Source (S): Common pin serving as the reference point for the drain and gate connections.

Functional Features

Low On-State Resistance: Enables efficient power transfer with minimal voltage drop.
High Switching Speed: Facilitates rapid switching transitions, reducing power loss during operation.
Low Gate Charge: Allows for quick and precise control of the MOSFET.

Advantages and Disadvantages

Advantages

High efficiency in power conversion applications.
Fast switching characteristics.
Low power dissipation.

Disadvantages

Susceptible to damage from overvoltage or overcurrent conditions.
Requires careful consideration of driving circuitry to prevent damage.

Working Principles

The IPD100N04S402ATMA1 operates based on the principle of field-effect transistors, where the gate voltage controls the conductivity between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters a low-resistance state, allowing current flow between the drain and source.

Detailed Application Field Plans

The IPD100N04S402ATMA1 finds extensive use in the following applications: - Switched-Mode Power Supplies: Utilized in high-frequency power converters for efficient energy transfer. - Motor Control: Employed in motor drive circuits for precise speed and torque control. - Voltage Regulation: Integrated into voltage regulator modules for stable power delivery.

Detailed and Complete Alternative Models

Several alternative models to the IPD100N04S402ATMA1 include: - IPD100N04S4L-08: Offers similar performance with enhanced thermal characteristics. - IPD100N04S4-03: Provides a lower on-state resistance for higher efficiency.

In conclusion, the IPD100N04S402ATMA1 serves as a vital component in power electronics, offering high efficiency and fast switching characteristics. Its application spans across various industries, making it a key element in modern electronic systems.

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