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IPD096N08N3GATMA1
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IPD096N08N3GATMA1

Product Overview

Category

The IPD096N08N3GATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in applications requiring high power and efficiency, such as in power supplies, motor control, and automotive systems.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • High efficiency

Package

The IPD096N08N3GATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels containing a specific quantity, typically 250 or 500 units per reel.

Specifications

  • Voltage Rating: 80V
  • Current Rating: 120A
  • On-State Resistance: 4.5mΩ
  • Gate Charge: 45nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD096N08N3GATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • Low conduction losses
  • High current-carrying capability
  • Enhanced thermal performance
  • Compatibility with various driving circuits

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low on-state resistance leading to reduced power dissipation
  • Fast switching speed enabling efficient power control

Disadvantages

  • Higher cost compared to traditional power transistors
  • Sensitivity to electrostatic discharge (ESD)

Working Principles

The IPD096N08N3GATMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage is applied, it creates an electric field that modulates the conductivity of the channel, allowing for efficient power regulation.

Detailed Application Field Plans

The IPD096N08N3GATMA1 finds extensive use in the following application fields: - Power supplies and converters - Motor drives and control systems - Automotive electronic control units (ECUs) - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IPD096N08N3GATMA1 include: - Infineon IPP60R190E6 - STMicroelectronics STP140NF75 - ON Semiconductor NCP51820

In conclusion, the IPD096N08N3GATMA1 power MOSFET offers high-performance characteristics suitable for demanding power management applications across various industries.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPD096N08N3GATMA1 v technických řešeních

  1. What is the maximum drain-source voltage of IPD096N08N3GATMA1?

    • The maximum drain-source voltage is 80V.

  2. What is the continuous drain current rating of IPD096N08N3GATMA1?

    • The continuous drain current rating is 120A.

  3. Can IPD096N08N3GATMA1 be used in automotive applications?

    • Yes, it is suitable for automotive applications.

  4. What is the typical on-resistance of IPD096N08N3GATMA1?

    • The typical on-resistance is 4.5mΩ.

  5. Is IPD096N08N3GATMA1 suitable for use in power supplies?

    • Yes, it is commonly used in power supply applications.

  6. Does IPD096N08N3GATMA1 have a low gate charge?

    • Yes, it has a low gate charge, making it suitable for high-frequency applications.

  7. What is the operating temperature range of IPD096N08N3GATMA1?

    • The operating temperature range is -55°C to 175°C.

  8. Can IPD096N08N3GATMA1 be used in motor control applications?

    • Yes, it is often used in motor control and drive applications.

  9. Does IPD096N08N3GATMA1 have built-in ESD protection?

    • Yes, it has built-in ESD protection features.

  10. Is IPD096N08N3GATMA1 RoHS compliant?

    • Yes, it is RoHS compliant, meeting environmental standards.