IPD082N10N3GATMA1

Introduction

The IPD082N10N3GATMA1 is a power MOSFET belonging to the category of electronic components. It is widely used in various applications due to its unique characteristics and functional features.

Basic Information Overview

• Category: Power MOSFET
• Use: The IPD082N10N3GATMA1 is used as a switching device in power electronics applications, such as motor control, power supplies, and inverters.
• Characteristics: This MOSFET offers low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The IPD082N10N3GATMA1 is typically available in a TO-252 package, also known as DPAK, which provides good thermal performance and ease of mounting.
• Essence: The essence of this component lies in its ability to efficiently control and switch high-power loads in various electronic circuits.
• Packaging/Quantity: It is commonly supplied in reels or tubes with varying quantities depending on the manufacturer's specifications.

Specifications

• Voltage Rating: 100V
• Current Rating: 82A
• On-State Resistance (RDS(on)): 8.2mΩ
• Gate Charge: 38nC
• Operating Temperature Range: -55°C to 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Detailed Pin Configuration

The IPD082N10N3GATMA1 typically has three pins: 1. Gate (G): Used to control the switching operation of the MOSFET. 2. Drain (D): Connected to the load in the circuit and carries the main current when the MOSFET is conducting. 3. Source (S): Connected to the ground or return path of the circuit.

Functional Features

• Low On-State Resistance: Enables efficient power transfer and reduces conduction losses.
• High Switching Speed: Facilitates rapid switching transitions, essential for high-frequency applications.
• Low Gate Charge: Minimizes drive requirements and switching losses, enhancing overall efficiency.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion applications.
• Suitable for high-frequency switching.
• Good thermal performance in the TO-252 package.

Disadvantages

• Sensitive to voltage and current spikes, requiring appropriate protection circuitry.
• Limited by its maximum voltage and current ratings.

Working Principles

The IPD082N10N3GATMA1 operates based on the principles of field-effect transistors. When a sufficient voltage is applied to the gate terminal, it creates an electric field that allows current to flow between the drain and source terminals. By controlling the gate voltage, the MOSFET can effectively switch high-power loads on and off.

Detailed Application Field Plans

The IPD082N10N3GATMA1 finds extensive use in the following application fields: - Motor Control: Driving and controlling the speed of electric motors in industrial and automotive systems. - Power Supplies: Regulating and converting electrical power in various consumer and industrial electronics. - Inverters: Converting DC power to AC for applications such as solar inverters and uninterruptible power supplies.

Detailed and Complete Alternative Models

• IPD082N10N3: Similar specifications and characteristics, offering interchangeability in many applications.
• IRF1405: A comparable power MOSFET with slightly different electrical parameters but suitable for similar applications.
• IXFH82N10Q3: An alternative option with similar voltage and current ratings, providing flexibility in design choices.

In conclusion, the IPD082N10N3GATMA1 power MOSFET serves as a crucial component in modern power electronics, offering high efficiency, fast switching, and reliable performance in diverse applications.

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