IPD060N03LGATMA1

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, motor control, and other high-current applications
Characteristics: Low on-state resistance, high switching speed, low gate charge
Package: TO-252-3 (DPAK)
Essence: High-performance power MOSFET for efficient power management
Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

Voltage Rating: 30V
Continuous Drain Current: 50A
RDS(ON): 6mΩ
Gate Charge: 22nC
Maximum Power Dissipation: 2.5W

Detailed Pin Configuration

The IPD060N03LGATMA1 follows the standard pin configuration for a TO-252-3 package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

Low on-state resistance for minimal conduction losses
High switching speed for improved efficiency
Low gate charge for reduced drive requirements

Advantages and Disadvantages

Advantages: - High performance in terms of on-state resistance and switching speed - Suitable for high-current applications - Low gate charge minimizes drive circuit complexity

Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to static discharge due to smaller feature sizes

Working Principles

The IPD060N03LGATMA1 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is well-suited for various applications including: - Power supplies - Motor control systems - DC-DC converters - Battery management systems - Inverters

Detailed and Complete Alternative Models

IPB60R190C6 - Similar performance with different package (TO-263-3)
IPP60R190C6 - Enhanced performance with lower RDS(ON)
IPD060N03L G - Lower cost alternative with slightly higher RDS(ON)

In conclusion, the IPD060N03LGATMA1 is a high-performance power MOSFET designed for efficient power management in various high-current applications. Its low on-state resistance, high switching speed, and low gate charge make it an ideal choice for demanding power electronics designs.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPD060N03LGATMA1 v technických řešeních

What is the maximum drain-source voltage of IPD060N03LGATMA1?
- The maximum drain-source voltage of IPD060N03LGATMA1 is 30V.
What is the continuous drain current rating of IPD060N03LGATMA1?
- The continuous drain current rating of IPD060N03LGATMA1 is 50A.
What is the on-state resistance (RDS(on)) of IPD060N03LGATMA1?
- The on-state resistance (RDS(on)) of IPD060N03LGATMA1 is typically 6.5mΩ at VGS = 10V.
What is the gate threshold voltage of IPD060N03LGATMA1?
- The gate threshold voltage of IPD060N03LGATMA1 is typically 2.5V.
Is IPD060N03LGATMA1 suitable for use in automotive applications?
- Yes, IPD060N03LGATMA1 is designed for automotive applications and meets the necessary standards.
What is the operating temperature range of IPD060N03LGATMA1?
- The operating temperature range of IPD060N03LGATMA1 is -55°C to 175°C.
Does IPD060N03LGATMA1 have built-in protection features?
- Yes, IPD060N03LGATMA1 has built-in overcurrent and thermal protection features.
Can IPD060N03LGATMA1 be used in high-frequency switching applications?
- Yes, IPD060N03LGATMA1 is suitable for high-frequency switching due to its low RDS(on) and fast switching characteristics.
What are the recommended mounting and soldering techniques for IPD060N03LGATMA1?
- The recommended mounting technique is through-hole mounting, and the recommended soldering technique is reflow soldering.
Are there any application notes or reference designs available for using IPD060N03LGATMA1 in specific technical solutions?
- Yes, application notes and reference designs are available from the manufacturer to assist in using IPD060N03LGATMA1 in various technical solutions.