Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
IPB80N08S2L07ATMA1

IPB80N08S2L07ATMA1

Product Overview

Category

The IPB80N08S2L07ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications such as motor control, DC-DC converters, and high-current switching circuits.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB80N08S2L07ATMA1 is typically available in a TO-263-7 package.

Essence

The essence of the IPB80N08S2L07ATMA1 lies in its ability to efficiently handle high power loads while minimizing power losses.

Packaging/Quantity

It is usually supplied in reels with a specific quantity per reel, typically 800 pieces per reel.

Specifications

  • Drain-Source Voltage (VDS): 80V
  • Continuous Drain Current (ID): 80A
  • On-State Resistance (RDS(on)): 8mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC

Detailed Pin Configuration

The IPB80N08S2L07ATMA1 features a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High current-handling capacity
  • Low conduction losses
  • Fast switching characteristics
  • Robust thermal performance

Advantages and Disadvantages

Advantages

  • Efficient power handling
  • Reduced heat dissipation
  • Enhanced system reliability
  • Improved overall efficiency

Disadvantages

  • Higher cost compared to traditional power transistors
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The IPB80N08S2L07ATMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the device can effectively regulate the power flow through the circuit.

Detailed Application Field Plans

The IPB80N08S2L07ATMA1 finds extensive use in various applications, including: - Motor control systems for electric vehicles - Power supplies for industrial equipment - Inverters for renewable energy systems - High-current switching circuits in automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the IPB80N08S2L07ATMA1 include: - IRF840 - FDP8870 - STP80NF03L

In conclusion, the IPB80N08S2L07ATMA1 power MOSFET offers high-performance characteristics suitable for demanding power management applications, making it a preferred choice for efficient power handling and control.

[Word Count: 398]

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPB80N08S2L07ATMA1 v technických řešeních

  1. What is the maximum drain-source voltage of IPB80N08S2L07ATMA1?

    • The maximum drain-source voltage of IPB80N08S2L07ATMA1 is 80V.
  2. What is the continuous drain current rating of IPB80N08S2L07ATMA1?

    • The continuous drain current rating of IPB80N08S2L07ATMA1 is 80A.
  3. What is the on-state resistance (RDS(on)) of IPB80N08S2L07ATMA1?

    • The on-state resistance (RDS(on)) of IPB80N08S2L07ATMA1 is typically 8mΩ at VGS = 10V.
  4. What is the gate threshold voltage of IPB80N08S2L07ATMA1?

    • The gate threshold voltage of IPB80N08S2L07ATMA1 is typically 2.5V.
  5. What is the power dissipation of IPB80N08S2L07ATMA1?

    • The power dissipation of IPB80N08S2L07ATMA1 is 300W.
  6. What are the typical applications for IPB80N08S2L07ATMA1?

    • IPB80N08S2L07ATMA1 is commonly used in motor control, battery protection, and power management applications.
  7. What is the operating temperature range of IPB80N08S2L07ATMA1?

    • The operating temperature range of IPB80N08S2L07ATMA1 is -55°C to 175°C.
  8. Does IPB80N08S2L07ATMA1 have built-in ESD protection?

    • Yes, IPB80N08S2L07ATMA1 has built-in ESD protection.
  9. Is IPB80N08S2L07ATMA1 RoHS compliant?

    • Yes, IPB80N08S2L07ATMA1 is RoHS compliant.
  10. What package type does IPB80N08S2L07ATMA1 come in?

    • IPB80N08S2L07ATMA1 comes in a TO-263-7 package.