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IPB65R099C6ATMA1
Product Overview
Category
The IPB65R099C6ATMA1 belongs to the category of power MOSFETs.
Use
It is commonly used in electronic circuits for switching and amplification purposes.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPB65R099C6ATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management in various electronic applications.
Packaging/Quantity
It is usually packaged in reels with a quantity per reel varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 6.5A
- On-Resistance (RDS(on)): 0.99Ω
- Power Dissipation (PD): 48W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IPB65R099C6ATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows for use in high-power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching applications.
Advantages
- Suitable for high voltage applications
- Low power dissipation
- Fast switching speed
Disadvantages
- Limited continuous drain current compared to higher-rated MOSFETs
- Higher on-resistance compared to some specialized MOSFETs
Working Principles
The IPB65R099C6ATMA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.
Detailed Application Field Plans
This MOSFET is widely used in: - Switching power supplies - Motor control - LED lighting - Solar inverters - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the IPB65R099C6ATMA1 include: - IPB60R099CP - IPB65R190CFD - IPB65R190C6
In conclusion, the IPB65R099C6ATMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for various electronic applications requiring efficient power management.
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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPB65R099C6ATMA1 v technických řešeních
What is the maximum drain-source voltage of IPB65R099C6ATMA1?
- The maximum drain-source voltage of IPB65R099C6ATMA1 is 650V.
What is the continuous drain current of IPB65R099C6ATMA1?
- The continuous drain current of IPB65R099C6ATMA1 is 65A.
What is the on-resistance of IPB65R099C6ATMA1?
- The on-resistance of IPB65R099C6ATMA1 is typically 99mΩ at Vgs = 10V.
What is the gate threshold voltage of IPB65R099C6ATMA1?
- The gate threshold voltage of IPB65R099C6ATMA1 is typically 2.5V.
What are the typical applications for IPB65R099C6ATMA1?
- IPB65R099C6ATMA1 is commonly used in motor control, power supplies, and DC-DC converters.
What is the operating temperature range of IPB65R099C6ATMA1?
- The operating temperature range of IPB65R099C6ATMA1 is -55°C to 150°C.
Does IPB65R099C6ATMA1 have built-in protection features?
- Yes, IPB65R099C6ATMA1 has built-in overcurrent protection and thermal shutdown features.
What is the package type of IPB65R099C6ATMA1?
- IPB65R099C6ATMA1 is available in a TO-263-7 package.
Is IPB65R099C6ATMA1 suitable for high-frequency switching applications?
- Yes, IPB65R099C6ATMA1 is suitable for high-frequency switching due to its low on-resistance.
Are there any recommended external components to use with IPB65R099C6ATMA1?
- It is recommended to use appropriate gate drivers and snubber circuits when integrating IPB65R099C6ATMA1 into a design for optimal performance and reliability.