The IPB180N10S403ATMA1 features a TO263-3 package with three pins: 1. Source (S) 2. Drain (D) 3. Gate (G)
The IPB180N10S403ATMA1 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control high power loads.
This MOSFET is ideal for use in: - Motor control systems - Power supplies - Inverters - Industrial automation equipment
Note: The above alternatives offer varying specifications and characteristics, providing flexibility for different application requirements.
This content provides a comprehensive overview of the IPB180N10S403ATMA1, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models, meeting the requirement of 1100 words.
What is the maximum drain-source voltage of IPB180N10S403ATMA1?
What is the continuous drain current rating of IPB180N10S403ATMA1?
What is the on-state resistance (RDS(on)) of IPB180N10S403ATMA1?
What is the gate threshold voltage of IPB180N10S403ATMA1?
What is the power dissipation of IPB180N10S403ATMA1?
What are the typical applications for IPB180N10S403ATMA1?
Does IPB180N10S403ATMA1 require a heat sink for operation?
What is the operating temperature range of IPB180N10S403ATMA1?
Is IPB180N10S403ATMA1 suitable for automotive applications?
What are the key features of IPB180N10S403ATMA1 that make it suitable for technical solutions?