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IPB100N08S2L07ATMA1
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IPB100N08S2L07ATMA1

Product Overview

Category

The IPB100N08S2L07ATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB100N08S2L07ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 80V
  • Continuous Drain Current (ID): 100A
  • On-Resistance (RDS(on)): 8mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB100N08S2L07ATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High current-carrying capability
  • Low conduction losses
  • Fast switching characteristics
  • Enhanced thermal performance

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low on-resistance for reduced power dissipation
  • Suitable for high-frequency switching applications

Disadvantages

  • Sensitive to static electricity and voltage spikes
  • Requires careful handling and protection during circuit assembly

Working Principles

The IPB100N08S2L07ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB100N08S2L07ATMA1 is widely used in: - Switch-mode power supplies - Motor control systems - Automotive electronics - Industrial automation equipment - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IPB100N08S2L07ATMA1 include: - IRF1010E - FDP8870 - STP80NF03L

In conclusion, the IPB100N08S2L07ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it an essential component in modern electronic systems.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IPB100N08S2L07ATMA1 v technických řešeních

  1. What is the maximum drain-source voltage of IPB100N08S2L07ATMA1?

    • The maximum drain-source voltage of IPB100N08S2L07ATMA1 is 80V.

  2. What is the continuous drain current rating of IPB100N08S2L07ATMA1?

    • The continuous drain current rating of IPB100N08S2L07ATMA1 is 100A.

  3. What is the on-resistance of IPB100N08S2L07ATMA1?

    • The on-resistance of IPB100N08S2L07ATMA1 is typically 8mΩ at Vgs = 10V.

  4. Can IPB100N08S2L07ATMA1 be used in automotive applications?

    • Yes, IPB100N08S2L07ATMA1 is designed for use in automotive applications.

  5. What is the operating temperature range of IPB100N08S2L07ATMA1?

    • The operating temperature range of IPB100N08S2L07ATMA1 is -55°C to 175°C.

  6. Does IPB100N08S2L07ATMA1 have built-in ESD protection?

    • Yes, IPB100N08S2L07ATMA1 features built-in ESD protection.

  7. What is the gate threshold voltage of IPB100N08S2L07ATMA1?

    • The gate threshold voltage of IPB100N08S2L07ATMA1 is typically 2.5V.

  8. Is IPB100N08S2L07ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB100N08S2L07ATMA1 is suitable for high-frequency switching applications.

  9. What package type does IPB100N08S2L07ATMA1 come in?

    • IPB100N08S2L07ATMA1 is available in a TO-263-7 package.

  10. Are there any application notes or reference designs available for using IPB100N08S2L07ATMA1?

    • Yes, Infineon provides application notes and reference designs for using IPB100N08S2L07ATMA1 in various technical solutions.