The IPB042N10N3GE8187ATMA1 belongs to the category of power MOSFETs.
It is used for high-power applications such as motor control, power supplies, and inverters.
The IPB042N10N3GE8187ATMA1 is typically available in a TO-263 package.
This MOSFET is essential for efficient power management in various electronic systems.
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
The IPB042N10N3GE8187ATMA1 features a standard pin configuration with the gate, drain, and source pins clearly labeled.
The IPB042N10N3GE8187ATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
This MOSFET is suitable for use in various applications including: - Motor drives - Switched-mode power supplies - DC-DC converters - Inverters
In conclusion, the IPB042N10N3GE8187ATMA1 is a high-performance power MOSFET designed for demanding applications that require efficient power management and high reliability.
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What is the maximum drain-source voltage of IPB042N10N3GE8187ATMA1?
What is the continuous drain current rating of IPB042N10N3GE8187ATMA1?
What is the on-state resistance (RDS(on)) of IPB042N10N3GE8187ATMA1?
What is the gate threshold voltage of IPB042N10N3GE8187ATMA1?
What is the maximum power dissipation of IPB042N10N3GE8187ATMA1?
What are the recommended operating temperature range for IPB042N10N3GE8187ATMA1?
Is IPB042N10N3GE8187ATMA1 suitable for automotive applications?
What type of package does IPB042N10N3GE8187ATMA1 come in?
Does IPB042N10N3GE8187ATMA1 have built-in protection features?
What are some typical applications for IPB042N10N3GE8187ATMA1?