IPB016N06L3GATMA1

Product Overview

Category

The IPB016N06L3GATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in applications requiring high power switching and efficient power management.

Characteristics

• High power handling capability
• Low on-state resistance
• Fast switching speed
• Efficient thermal performance

Package

The IPB016N06L3GATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for controlling and managing power flow in various electronic circuits and systems.

Packaging/Quantity

It is usually supplied in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): [specification]
• Continuous Drain Current (ID): [specification]
• On-State Resistance (RDS(on)): [specification]
• Gate-Source Voltage (VGS): [specification]
• Operating Temperature Range: [specification]

Detailed Pin Configuration

The IPB016N06L3GATMA1 features a standard pin configuration with clearly defined drain, source, and gate terminals. The pinout diagram should be referred to for specific details.

Functional Features

• High current handling capacity
• Low conduction losses
• Fast switching characteristics
• Robust thermal performance

Advantages

• Efficient power management
• Reduced heat dissipation
• Enhanced system reliability
• Suitable for high-frequency applications

Disadvantages

• Sensitivity to static electricity
• Gate drive considerations required for optimal performance

Working Principles

The IPB016N06L3GATMA1 operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage at the gate terminal.

Detailed Application Field Plans

The IPB016N06L3GATMA1 finds extensive use in: - Switching power supplies - Motor control systems - LED lighting applications - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

• IPB017N06N3 G
• IPB018N08N3 G
• IPB019N10N3 G
• [Add more alternative models as per availability]

In conclusion, the IPB016N06L3GATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it an essential component in modern electronic systems.

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