BSZ120P03NS3GATMA1

Introduction

The BSZ120P03NS3GATMA1 is a power MOSFET belonging to the semiconductor category. This device is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

• Category: Semiconductor, Power MOSFET
• Use: Power switching and amplification in electronic circuits
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-220AB
• Essence: Efficient power management and control
• Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer

Specifications

• Voltage Rating: 30V
• Current Rating: 120A
• On-Resistance: 3mΩ
• Gate-Source Voltage (Max): ±20V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The BSZ120P03NS3GATMA1 follows the standard pin configuration for a TO-220AB package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low on-resistance for minimal power loss
• Fast switching speed for efficient operation
• High voltage capability for versatile applications

Advantages and Disadvantages

Advantages

• High current handling capability
• Low on-resistance for reduced power dissipation
• Wide operating temperature range

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The BSZ120P03NS3GATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

This power MOSFET is commonly used in the following applications: - Switching power supplies - Motor control - Audio amplifiers - LED lighting systems

Detailed and Complete Alternative Models

• BSZ120N03LS3GATMA1
• BSZ120P02NS3GATMA1
• BSZ100P03NS3GATMA1
• BSZ120P03NS3GATMB1

In conclusion, the BSZ120P03NS3GATMA1 power MOSFET offers high performance and reliability, making it a preferred choice for various electronic applications.

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