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BSS139 E6327

BSS139 E6327

Product Overview

The BSS139 E6327 belongs to the category of N-channel enhancement mode field-effect transistors (FETs). It is commonly used in electronic circuits for switching and amplification purposes. The characteristics of this product include low on-resistance, high-speed switching, and low gate threshold voltage. The package typically consists of a small outline transistor (SOT-23) with a quantity of 3000 pieces per reel. The essence of the BSS139 E6327 lies in its ability to efficiently control the flow of current in electronic devices.

Specifications

  • Drain-Source Voltage (VDS): 250V
  • Continuous Drain Current (ID): 220mA
  • Total Power Dissipation (PD): 830mW
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The BSS139 E6327 features three pins: the gate (G), drain (D), and source (S). The pin configuration is as follows: - G (Gate) - Pin 1 - D (Drain) - Pin 2 - S (Source) - Pin 3

Functional Features

This FET offers efficient switching capabilities, making it suitable for applications requiring rapid on/off transitions. Additionally, its low on-resistance minimizes power losses and heat generation during operation.

Advantages and Disadvantages

Advantages

  • Low on-resistance
  • High-speed switching
  • Compact SOT-23 package
  • Wide operating temperature range

Disadvantages

  • Limited continuous drain current compared to some alternative models
  • Relatively low gate-source voltage rating

Working Principles

The BSS139 E6327 operates based on the principle of field-effect modulation, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal. When a positive voltage is applied to the gate, it creates an electric field that allows current to flow from the drain to the source.

Detailed Application Field Plans

The BSS139 E6327 finds extensive use in various electronic applications, including but not limited to: - Switching circuits - Amplifiers - Power management systems - LED lighting control - Battery charging circuits

Detailed and Complete Alternative Models

Some alternative models to the BSS139 E6327 include: - IRF530N - FQP30N06L - NDP6020P

In conclusion, the BSS139 E6327 is a versatile N-channel FET with excellent switching characteristics and wide application potential across diverse electronic circuits.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací BSS139 E6327 v technických řešeních

  1. What is the BSS139 E6327?

    • The BSS139 E6327 is a N-channel enhancement mode field-effect transistor (FET) commonly used in electronic circuits.
  2. What are the typical applications of BSS139 E6327?

    • It is commonly used in switching and amplification applications such as low voltage, low current switching applications.
  3. What is the maximum drain-source voltage for BSS139 E6327?

    • The maximum drain-source voltage for BSS139 E6327 is typically around 250V.
  4. What is the maximum continuous drain current for BSS139 E6327?

    • The maximum continuous drain current for BSS139 E6327 is typically around 220mA.
  5. What are the key features of BSS139 E6327?

    • Some key features include low threshold voltage, low on-resistance, and high-speed switching.
  6. Can BSS139 E6327 be used in audio amplifier circuits?

    • Yes, it can be used in audio amplifier circuits, especially in low power applications.
  7. What are the typical operating temperatures for BSS139 E6327?

    • The typical operating temperature range for BSS139 E6327 is -55°C to 150°C.
  8. Is BSS139 E6327 suitable for battery-powered applications?

    • Yes, it is suitable for battery-powered applications due to its low voltage and low current characteristics.
  9. Can BSS139 E6327 be used in motor control applications?

    • It can be used in small motor control applications where low voltage and low current requirements are present.
  10. Are there any common failure modes associated with BSS139 E6327?

    • Common failure modes may include overvoltage or overcurrent conditions leading to breakdown or thermal stress. Proper heat sinking and voltage/current protection measures should be considered in the design.