BSP123E6327T

Product Overview

Use

It is commonly used for switching and amplifying electronic signals in various applications.

Characteristics

Low on-state resistance
High-speed switching capability
Low gate charge
Enhanced ruggedness

Package

The BSP123E6327T is typically available in a TO-220 package, providing efficient thermal performance.

Essence

This MOSFET offers high efficiency and reliability in power management applications.

Packaging/Quantity

It is usually supplied in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): 100V
Continuous Drain Current (ID): 6A
Power Dissipation (PD): 2.5W
Gate-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 0.25Ω

Detailed Pin Configuration

The BSP123E6327T features a standard three-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

Fast switching speed
Low conduction losses
Enhanced thermal performance

Advantages

High efficiency
Reliable performance
Suitable for high-frequency applications

Disadvantages

Sensitivity to static electricity
Limited voltage handling capability compared to some alternatives

Working Principles

The BSP123E6327T operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate conductivity within the semiconductor material.

Detailed Application Field Plans

The BSP123E6327T finds application in various fields, including: - Switching power supplies - Motor control - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the BSP123E6327T include: - IRF540N - FQP30N06L - STP55NF06L

In conclusion, the BSP123E6327T power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it a valuable component in modern electronic systems.

Word Count: 298

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací BSP123E6327T v technických řešeních

What is BSP123E6327T?
- BSP123E6327T is a N-channel enhancement mode field-effect transistor (FET) designed for use in low voltage applications.
What are the typical applications of BSP123E6327T?
- BSP123E6327T is commonly used in power management, load switching, and battery protection circuits.
What is the maximum drain-source voltage rating of BSP123E6327T?
- The maximum drain-source voltage rating of BSP123E6327T is typically around 30V.
What is the maximum continuous drain current of BSP123E6327T?
- The maximum continuous drain current of BSP123E6327T is typically around 170mA.
What is the on-state resistance (RDS(on)) of BSP123E6327T?
- The on-state resistance of BSP123E6327T is typically around 1.6 ohms.
Is BSP123E6327T suitable for use in battery protection circuits?
- Yes, BSP123E6327T is suitable for use in battery protection circuits due to its low threshold voltage and low on-state resistance.
Can BSP123E6327T be used in load switching applications?
- Yes, BSP123E6327T is well-suited for load switching applications due to its low on-state resistance and high current handling capability.
What are the thermal characteristics of BSP123E6327T?
- BSP123E6327T has a low thermal resistance and is designed to operate within a wide temperature range, making it suitable for various environmental conditions.
Does BSP123E6327T require external protection diodes?
- No, BSP123E6327T has built-in protection against reverse polarity and other common fault conditions, eliminating the need for external protection diodes in many applications.
Are there any specific layout considerations when using BSP123E6327T in a circuit?
- It is recommended to minimize the length of high-current traces and provide adequate heat sinking for BSP123E6327T to ensure optimal performance and reliability in the circuit.