IDT71V67602S166BQGI8

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
Package: Quad Flat Package (QFP)
Essence: Provides fast and reliable data storage and retrieval capabilities
Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

Memory Type: Synchronous SRAM
Density: 16 Megabits (2 Megabytes)
Organization: 2M x 8 (word x bit)
Operating Voltage: 3.3V
Access Time: 10 ns
Clock Frequency: 166 MHz
Interface: Parallel
Operating Temperature Range: -40°C to +85°C

Pin Configuration

The IDT71V67602S166BQGI8 has a total of 100 pins. The detailed pin configuration is as follows:

VDDQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
VSSQ
NC
A0
A1
A2
A3
A4
A5
A6
A7
VSS
A8
A9
A10
A11
A12
A13
A14
A15
VCC
WE#
OE#
CE#
UB#
LB#
NC
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
VSSQ
NC
A16
A17
A18
A19
A20
A21
A22
A23
VSS
A24
A25
A26
A27
A28
A29
A30
A31
VCC
WE#
OE#
CE#
UB#
LB#
NC
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
VSSQ
NC
A32
A33
A34
A35
A36
A37
A38
A39
VSS
A40
A41
A42
A43
A44
A45
A46
A47
VCC
WE#
OE#
CE#

Functional Features

High-speed operation: The IDT71V67602S166BQGI8 offers fast access times, allowing for quick data retrieval and storage.
Low-power consumption: Designed with power efficiency in mind, this memory device minimizes energy usage.
Synchronous operation: The device synchronizes its operations with an external clock signal, ensuring reliable data transfer.
Easy integration: The parallel interface simplifies the integration of the IDT71V67602S166BQGI8 into various systems.

Advantages and Disadvantages

Advantages: - High-speed performance - Low-power consumption - Reliable synchronous operation - Easy integration into different systems

Disadvantages: - Limited memory capacity (16 Megabits)

Working Principles

The IDT71V67602S166BQGI8 is a synchronous SRAM that operates based on the synchronous read and write cycles. It utilizes an external clock signal to synchronize its operations. When a read operation is initiated, the device retrieves the requested data from the memory array and outputs it on the data pins. Similarly, during a write operation, the input data is written to the specified memory location. The device also incorporates control signals such as WE# (Write Enable), OE# (Output Enable), CE

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V67602S166BQGI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V67602S166BQGI8 in technical solutions:

Question: What is the IDT71V67602S166BQGI8?
Answer: The IDT71V67602S166BQGI8 is a high-speed synchronous static RAM (SRAM) with a capacity of 16 Megabits (2 Megabytes).
Question: What is the operating voltage range for this SRAM?
Answer: The IDT71V67602S166BQGI8 operates at a voltage range of 3.3V ± 0.3V.
Question: What is the maximum clock frequency supported by this SRAM?
Answer: This SRAM supports a maximum clock frequency of 166 MHz.
Question: Can this SRAM be used in industrial applications?
Answer: Yes, the IDT71V67602S166BQGI8 is suitable for use in industrial applications due to its wide temperature range (-40°C to +85°C) and robust design.
Question: Does this SRAM support burst mode operation?
Answer: Yes, the IDT71V67602S166BQGI8 supports burst mode operation, allowing for efficient data transfer.
Question: What is the access time of this SRAM?
Answer: The access time of this SRAM is 6 ns, ensuring fast and reliable data retrieval.
Question: Can this SRAM be used in battery-powered devices?
Answer: Yes, the IDT71V67602S166BQGI8 has low power consumption and can be used in battery-powered devices.
Question: Is this SRAM compatible with standard microcontrollers?
Answer: Yes, this SRAM is compatible with standard microcontrollers and can be easily integrated into existing systems.
Question: Does this SRAM have any built-in error correction capabilities?
Answer: No, the IDT71V67602S166BQGI8 does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.
Question: Can this SRAM be used in high-reliability applications?
Answer: Yes, the IDT71V67602S166BQGI8 is designed for high-reliability applications and offers features like data retention during power loss and robust operation in harsh environments.

Please note that these answers are general and may vary depending on the specific requirements and use cases of the technical solution.