IDT71V67602S133BQGI

Product Overview

Category

The IDT71V67602S133BQGI belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable operation

Package

The IDT71V67602S133BQGI is available in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage and retrieval capabilities for electronic devices.

Packaging/Quantity

The IDT71V67602S133BQGI is typically packaged in trays or reels, with each package containing a specific quantity of integrated circuits. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: IDT71V67602S133BQGI
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 8 Megabits (1 Megabyte)
• Speed: 133 MHz
• Voltage: 3.3V
• Organization: 512K words x 16 bits
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V67602S133BQGI has a total of 48 pins, which are assigned specific functions for proper integration into electronic circuits. The pin configuration is as follows:

(Pin Number) - (Pin Name) - (Function) 1 - A0 - Address Input 2 - A1 - Address Input 3 - A2 - Address Input 4 - A3 - Address Input 5 - A4 - Address Input 6 - A5 - Address Input 7 - A6 - Address Input 8 - A7 - Address Input 9 - A8 - Address Input 10 - A9 - Address Input 11 - A10 - Address Input 12 - A11 - Address Input 13 - A12 - Address Input 14 - A13 - Address Input 15 - A14 - Address Input 16 - A15 - Address Input 17 - DQ0 - Data Input/Output 18 - DQ1 - Data Input/Output 19 - DQ2 - Data Input/Output 20 - DQ3 - Data Input/Output 21 - DQ4 - Data Input/Output 22 - DQ5 - Data Input/Output 23 - DQ6 - Data Input/Output 24 - DQ7 - Data Input/Output 25 - VCC - Power Supply 26 - GND - Ground 27 - WE - Write Enable 28 - OE - Output Enable 29 - CE1 - Chip Enable 1 30 - CE2 - Chip Enable 2 31 - CE3 - Chip Enable 3 32 - CE4 - Chip Enable 4 33 - CE5 - Chip Enable 5 34 - CE6 - Chip Enable 6 35 - CE7 - Chip Enable 7 36 - CE8 - Chip Enable 8 37 - LB - Lower Byte Control 38 - UB - Upper Byte Control 39 - BYTE - Byte Control 40 - CLK - Clock Input 41 - CKE - Clock Enable 42 - CS - Chip Select 43 - RAS - Row Address Strobe 44 - CAS - Column Address Strobe 45 - WEN - Write Enable 46 - OEN - Output Enable 47 - VCC - Power Supply 48 - GND - Ground

Functional Features

The IDT71V67602S133BQGI offers the following functional features:

• High-speed data transfer
• Low power consumption
• Easy integration into electronic circuits
• Reliable operation in various environmental conditions

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact package size

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity

Working Principles

The IDT71V67602S133BQGI operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells within the IC are organized in a matrix-like structure, with each cell capable of storing one bit of data. The address inputs determine the location of the desired data, which can be read or written using the appropriate control signals.

Detailed Application Field Plans

The IDT71V67602S133BQGI finds applications in various electronic devices that require high-speed and reliable memory storage. Some of the potential application