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IDT71V65802S100BG8
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
- Package: Ball Grid Array (BGA)
- Essence: Provides high-performance data storage and retrieval capabilities for various electronic devices
- Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements
Specifications
- Memory Type: Synchronous SRAM
- Density: 2 Megabits (256K x 8)
- Operating Voltage: 3.3V
- Access Time: 10 ns
- Operating Temperature Range: -40°C to +85°C
- Interface: Parallel
- Data Retention: Greater than 20 years
- Package Dimensions: 14mm x 22mm
Pin Configuration
The IDT71V65802S100BG8 has a total of 100 pins. The pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- VSSQ
- DQ8
- DQ9
- DQ10
- DQ11
- DQ12
- DQ13
- DQ14
- DQ15
- VDDQ
- DQ16
- DQ17
- DQ18
- DQ19
- DQ20
- DQ21
- DQ22
- DQ23
- VSSQ
- DQ24
- DQ25
- DQ26
- DQ27
- DQ28
- DQ29
- DQ30
- DQ31
- VDDQ
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- VSSQ
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- VDDQ
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- VSSQ
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- VDDQ
- CE#
- WE#
- OE#
- UB#
- LB#
- ZZ#
- ZZ#
- ZZ#
- ZZ#
- VSSQ
- ZZ#
- ZZ#
- ZZ#
- ZZ#
- ZZ#
- ZZ#
- ZZ#
- ZZ#
- VDDQ
- ZZ#
- ZZ#
- ZZ#
- ZZ#
- ZZ#
- ZZ#
- ZZ#
- ZZ#
Functional Features
- High-speed operation with a 10 ns access time
- Low-power consumption for energy-efficient applications
- Synchronous interface for easy integration with other components
- Reliable data retention for long-term storage requirements
- Wide operating temperature range for versatile usage scenarios
Advantages and Disadvantages
Advantages: - High-speed performance enables quick data access - Low-power consumption helps conserve energy - Synchronous interface simplifies system integration - Reliable data retention ensures data integrity - Wide operating temperature range allows usage in various environments
Disadvantages: - Limited memory capacity compared to newer technologies - Parallel interface may not be suitable for all applications - BGA package may require specialized equipment for installation or replacement
Working Principles
The IDT71V65802S100BG8 is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates synchronously with the system clock, allowing for efficient data transfer between the memory and other components. The memory cells store data as electrical charges, which can be read or written by applying appropriate voltage levels to the address and control inputs.
Detailed Application Field Plans
The IDT71V65802S100BG8 is commonly used in various electronic devices
Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V65802S100BG8 v technických řešeních
Sure! Here are 10 common questions and answers related to the application of IDT71V65802S100BG8 in technical solutions:
Q: What is IDT71V65802S100BG8? A: IDT71V65802S100BG8 is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V65802S100BG8? A: The IDT71V65802S100BG8 has a capacity of 8 megabits (Mb), which is equivalent to 1 megabyte (MB).
Q: What is the operating voltage range for IDT71V65802S100BG8? A: The operating voltage range for IDT71V65802S100BG8 is typically between 3.0V and 3.6V.
Q: What is the speed rating of IDT71V65802S100BG8? A: The speed rating of IDT71V65802S100BG8 is 100 MHz, indicating its maximum operating frequency.
Q: What is the pin configuration of IDT71V65802S100BG8? A: IDT71V65802S100BG8 has a 100-ball grid array (BGA) package with a specific pin configuration. Please refer to the datasheet for detailed pin information.
Q: Can IDT71V65802S100BG8 be used in industrial applications? A: Yes, IDT71V65802S100BG8 is suitable for use in various industrial applications due to its robust design and wide operating temperature range.
Q: Does IDT71V65802S100BG8 support burst mode operation? A: Yes, IDT71V65802S100BG8 supports burst mode operation, allowing for faster data transfer rates.
Q: Can IDT71V65802S100BG8 be used in battery-powered devices? A: Yes, IDT71V65802S100BG8 can be used in battery-powered devices as it operates within the typical voltage range of such devices.
Q: Is IDT71V65802S100BG8 compatible with other SRAM chips? A: IDT71V65802S100BG8 follows industry-standard protocols and pinouts, making it compatible with other SRAM chips that adhere to the same standards.
Q: What are some typical applications of IDT71V65802S100BG8? A: IDT71V65802S100BG8 is commonly used in networking equipment, telecommunications systems, embedded systems, and other high-performance computing applications where fast and reliable memory access is required.
Please note that these answers are general and may vary depending on specific requirements and use cases. It's always recommended to refer to the datasheet and consult with technical experts for accurate information.