IDT71V65703S80PFI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 80-pin Fine-Pitch Ball Grid Array (FBGA)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in reels of 250 units

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (4M)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 8 ns
• Clock Frequency: 80 MHz
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Pin Configuration

The IDT71V65703S80PFI8 IC has a total of 80 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. A16
28. A17
29. A18
30. A19
31. A20
32. A21
33. A22
34. A23
35. A24
36. A25
37. A26
38. A27
39. A28
40. A29
41. A30
42. A31
43. A32
44. A33
45. A34
46. A35
47. A36
48. A37
49. A38
50. A39
51. A40
52. A41
53. A42
54. A43
55. A44
56. A45
57. A46
58. A47
59. A48
60. A49
61. A50
62. A51
63. A52
64. A53
65. A54
66. A55
67. A56
68. A57
69. A58
70. A59
71. A60
72. A61
73. A62
74. A63
75. CLK
76. CKE
77. CS#
78. WE#
79. OE#
80. VDD

Functional Features

• High-speed operation with an access time of 8 ns
• Low-power consumption for energy-efficient applications
• Synchronous interface for easy integration into system designs
• Reliable data storage and retrieval capabilities
• Wide operating temperature range for versatile usage scenarios

Advantages and Disadvantages

Advantages: - Fast access time enables quick data processing - Low-power consumption helps conserve energy - Synchronous interface simplifies system integration - Reliable performance ensures data integrity - Wide operating temperature range allows for various applications

Disadvantages: - Limited memory capacity compared to higher-density alternatives - Parallel interface may require additional circuitry for compatibility with certain systems - Higher cost per bit compared to some other memory technologies

Working Principles

The IDT71V65703S80PFI8 is a synchronous SRAM that stores and retrieves data using an internal clock signal. It operates at a clock frequency of 80 MHz, allowing for fast data access. The memory cells are organized in a 512K x 8 configuration, providing a total capacity of 4 Megabits.

When a read or write operation is initiated, the appropriate address is provided to select the desired memory location. Data can then be written to or read from the selected address. The synchronous nature of the device ensures that data transfers occur in sync with the clock signal, enabling reliable and efficient operation.

Detailed Application Field Plans

The IDT71V65703S80PFI8 is commonly used in various applications that require high-speed and low-power memory solutions. Some potential application fields include:

1. Networking equipment: Used as cache memory in routers, switches, and network appliances to enhance data processing speed.
2. Telecommunications systems: Employed in base stations, voice/data switches, and communication infrastructure to store critical data.