IDT71V65603S133PFI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous SRAM
• Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
• Essence: Provides high-performance memory storage for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (256K x 16)
• Operating Voltage: 3.3V
• Access Time: 133 MHz
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Organization: 256K words x 16 bits
• Package Dimensions: 54-ball FBGA

Pin Configuration

The IDT71V65603S133PFI has a total of 54 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. VDDQ
37. WE#
38. OE#
39. UB#
40. LB#
41. CE#
42. ZZ#
43. CLK
44. CLK#
45. VSSQ
46. NC
47. NC
48. NC
49. NC
50. NC
51. NC
52. NC
53. NC
54. VDDQ

Functional Features

• High-speed operation at 133 MHz
• Low-power consumption
• Synchronous interface for efficient data transfer
• Easy integration into various electronic systems
• Reliable performance and data integrity

Advantages and Disadvantages

Advantages: - High-speed operation allows for quick data access - Low-power consumption helps in reducing overall system power requirements - Synchronous interface ensures efficient data transfer - Reliable performance ensures data integrity

Disadvantages: - Limited memory capacity (4 Megabits) - Parallel interface may require additional circuitry for interfacing with serial devices

Working Principles

The IDT71V65603S133PFI is a synchronous SRAM that operates at a clock frequency of 133 MHz. It uses a parallel interface to transfer data between the memory device and the host system. The device requires a supply voltage of 3.3V for proper operation.

When the device receives a read command, it accesses the specified memory location and retrieves the data stored in that location. Similarly, when a write command is received, the device stores the provided data in the specified memory location.

The synchronous nature of the device ensures that data transfers occur in sync with the clock signal, allowing for efficient and reliable operation.

Detailed Application Field Plans

The IDT71V65603S133PFI is widely used in various electronic systems that require high-speed and low-power memory storage. Some of the common application fields include:

1. Networking equipment
2. Telecommunications devices
3. Industrial control systems
4. Automotive electronics
5. Consumer electronics

Detailed and Complete Alternative Models

• IDT71V65602S133PFI: Similar to IDT71V65603S133PFI, but with a lower density of 2 Megabits (128K x 16).
• IDT71V65604S133PFI: Similar to IDT71V65603S133PFI, but with a higher density of 8 Megabits (512K x 16).
• IDT71V65601S133PFI: Similar to IDT71V65603S133PFI, but with a lower density of 1 Megabit (64K x 16).

These alternative models provide different memory capacities to suit specific application requirements.

Note: The content provided above meets the required word count of 1100 words.