IDT71V65602ZS133BG8

Product Overview

Category

The IDT71V65602ZS133BG8 belongs to the category of integrated circuits (ICs).

Use

This product is primarily used in electronic devices for memory storage and data processing.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable operation

Package

The IDT71V65602ZS133BG8 is available in a compact package that ensures easy integration into various electronic systems.

Essence

This product is essential for efficient data storage and retrieval in electronic devices, enabling smooth functioning and enhanced performance.

Packaging/Quantity

The IDT71V65602ZS133BG8 is typically packaged in trays or reels, with each containing a specific quantity of units. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4M x 16
• Operating Voltage: 3.3V
• Access Time: 133ns
• Interface: Parallel
• Data Retention: More than 10 years
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V65602ZS133BG8 has a total of 48 pins, which are assigned specific functions as follows:

1. VCC - Power supply voltage
2. GND - Ground reference
3. A0-A19 - Address inputs
4. DQ0-DQ15 - Data inputs/outputs
5. CE1, CE2 - Chip enable inputs
6. OE - Output enable input
7. WE - Write enable input
8. UB/LB - Upper byte/lower byte control
9. CLK - Clock input
10. NC - No connection (reserved pin)

Functional Features

• High-speed data access and retrieval
• Easy integration into various electronic systems
• Low power consumption for energy efficiency
• Reliable operation with minimal errors
• Compatibility with parallel interface devices

Advantages

• Fast data transfer speeds enhance overall system performance
• Large storage capacity allows for extensive data storage requirements
• Low power consumption prolongs battery life in portable devices
• Reliable operation ensures data integrity and system stability
• Compatibility with parallel interface devices simplifies integration

Disadvantages

• Higher cost compared to other memory technologies
• Limited scalability in terms of storage capacity
• Susceptible to electromagnetic interference (EMI)
• Requires additional circuitry for interfacing with serial devices

Working Principles

The IDT71V65602ZS133BG8 operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The device utilizes an array of transistors and capacitors to store and retrieve data quickly.

Detailed Application Field Plans

The IDT71V65602ZS133BG8 finds applications in various electronic devices, including but not limited to:

1. Personal computers
2. Servers
3. Networking equipment
4. Telecommunications devices
5. Automotive electronics
6. Industrial control systems

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-UI10
2. Micron MT48LC4M16A2P-75
3. Cypress CY62157EV30LL-45ZSXI
4. Renesas R1LV0416DSB-7SI

These alternative models offer similar specifications and functionality to the IDT71V65602ZS133BG8, providing options for different sourcing and compatibility requirements.

In conclusion, the IDT71V65602ZS133BG8 is a high-performance SRAM IC that offers fast data access, large storage capacity, and low power consumption. Its compatibility with parallel interface devices makes it suitable for various applications in the electronics industry. While it has certain disadvantages, such as higher cost and limited scalability, alternative models are available to cater to specific needs.