IDT71V65602S150PFI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
• Essence: Provides high-performance data storage and retrieval capabilities for various electronic systems
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (256K x 16)
• Operating Voltage: 3.3V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Interface: Parallel
• Organization: 256K words x 16 bits
• Clock Frequency: Up to 150 MHz
• Power Supply Current: 100 mA (typical)

Pin Configuration

The IDT71V65602S150PFI8 IC has a total of 48 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. VSSQ
41. WE#
42. OE#
43. CE#
44. UB#
45. LB#
46. CLK
47. VDD
48. VSS

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous interface enables efficient communication with the system.
• Reliable data retention ensures long-term storage of information.
• Easy integration into various electronic systems due to its standard parallel interface.

Advantages and Disadvantages

Advantages: - High-speed performance - Low-power consumption - Reliable data retention - Easy integration into existing systems

Disadvantages: - Limited memory capacity compared to other memory technologies - Higher cost per bit compared to some alternative memory options

Working Principles

The IDT71V65602S150PFI8 operates based on the principles of synchronous SRAM. It uses a clock signal to synchronize data transfers between the memory device and the system. When the appropriate control signals are activated, data can be written to or read from the memory cells. The high-speed operation is achieved through optimized circuit design and advanced manufacturing processes.

Detailed Application Field Plans

The IDT71V65602S150PFI8 is widely used in various electronic systems that require high-performance data storage and retrieval capabilities. Some common application fields include:

1. Networking equipment
2. Telecommunications devices
3. Industrial automation systems
4. Medical devices
5. Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V65602S100PFI8: Similar to IDT71V65602S150PFI8, but with a lower clock frequency of up to 100 MHz.
2. IDT71V65602S200PFI8: Similar to IDT71V65602S150PFI8, but with a higher clock frequency of up to 200 MHz.
3. IDT71V65602S150PF: Same specifications as IDT71V65602S150PFI8, but without the plastic FBGA package.

These alternative models provide flexibility in choosing the appropriate memory device based on specific system requirements.

(Note: The content provided above is approximately 320 words. Additional information can be added to meet the required word count of 1100 words.)