IDT71V65602S150BG8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed synchronous static random-access memory (SRAM)
  • Low power consumption
  • Large storage capacity
• Package: BG8 package
• Essence: The IDT71V65602S150BG8 is a high-performance SRAM chip designed for various applications that require fast and reliable data storage.
• Packaging/Quantity: Available in bulk packaging, quantity varies based on customer requirements.

Specifications

• Memory Type: Synchronous SRAM
• Organization: 256K x 36 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Data Retention: Greater than 10 years
• Package Dimensions: 119-ball BGA (Ball Grid Array)

Pin Configuration

The IDT71V65602S150BG8 has a total of 119 pins. Below is the detailed pin configuration:

(Please refer to the datasheet or product documentation for the complete pin configuration diagram.)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Synchronous design ensures efficient communication with the system bus.
• Low power consumption makes it suitable for battery-powered devices.
• Large storage capacity enables the storage of significant amounts of data.
• Reliable data retention ensures data integrity over extended periods.

Advantages and Disadvantages

Advantages: - High-speed operation - Low power consumption - Large storage capacity - Reliable data retention

Disadvantages: - Limited compatibility with certain systems due to the parallel interface - Higher cost compared to other memory technologies

Working Principles

The IDT71V65602S150BG8 operates based on the principles of synchronous SRAM. It uses a clock signal to synchronize data transfers between the memory and the system bus. When a read or write operation is initiated, the chip accesses the requested data from its internal storage cells and transfers it to/from the external system.

Detailed Application Field Plans

The IDT71V65602S150BG8 is commonly used in various applications that require high-speed and reliable data storage, such as:

1. Networking equipment
2. Telecommunications systems
3. Industrial automation
4. Medical devices
5. Automotive electronics

Alternative Models

Below are some alternative models that offer similar functionality:

1. Micron MT45W256MW16GE-701 WT (256Mb SDRAM)
2. Samsung K4B2G1646E-BCK0 (2Gb DDR3 SDRAM)
3. Cypress CY7C1049DV33-10ZSXI (128K x 8 SRAM)

These alternative models can be considered based on specific requirements and compatibility with the target system.

Note: The content provided above is for illustrative purposes only and may not reflect actual specifications or pin configurations. Please refer to the official datasheet or product documentation for accurate information.