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IDT71V65602S133PF8

IDT71V65602S133PF8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous SRAM
  • Package: 100-pin TQFP (Thin Quad Flat Package)
  • Essence: Provides high-performance memory storage for various electronic devices
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous Static Random Access Memory (SRAM)
  • Density: 4 Megabits (256K x 16)
  • Access Time: 8.5 ns
  • Operating Voltage: 3.3V
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Organization: 256K words x 16 bits
  • Data Retention: Greater than 10 years
  • Package Dimensions: 14mm x 14mm

Pin Configuration

The IDT71V65602S133PF8 has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSSQ
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VDDQ
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. A16
  37. A17
  38. A18
  39. A19
  40. VSSQ
  41. CE2#
  42. CE1#
  43. WE#
  44. OE#
  45. UB#
  46. LB#
  47. CE3#
  48. CE4#
  49. CE5#
  50. CE6#
  51. CE7#
  52. CE8#
  53. CE9#
  54. CE10#
  55. CE11#
  56. CE12#
  57. CE13#
  58. CE14#
  59. CE15#
  60. CE16#
  61. CE17#
  62. CE18#
  63. CE19#
  64. CE20#
  65. CE21#
  66. CE22#
  67. CE23#
  68. CE24#
  69. CE25#
  70. CE26#
  71. CE27#
  72. CE28#
  73. CE29#
  74. CE30#
  75. CE31#
  76. CE32#
  77. CE33#
  78. CE34#
  79. CE35#
  80. CE36#
  81. CE37#
  82. CE38#
  83. CE39#
  84. CE40#
  85. CE41#
  86. CE42#
  87. CE43#
  88. CE44#
  89. CE45#
  90. CE46#
  91. CE47#
  92. CE48#
  93. CE49#
  94. CE50#
  95. CE51#
  96. CE52#
  97. CE53#
  98. CE54#
  99. CE55#
  100. VDDQ

Functional Features

  • High-speed operation with an access time of 8.5 ns
  • Low-power consumption for energy-efficient applications
  • Synchronous interface allows for easy integration with other components
  • Reliable data retention for long-term storage
  • Wide operating temperature range for versatile usage scenarios

Advantages and Disadvantages

Advantages: - High-speed performance enables quick data access - Low-power consumption extends battery life in portable devices - Synchronous interface simplifies system design and integration - Reliable data retention ensures data integrity over time

Disadvantages: - Limited memory capacity compared to newer technologies - Parallel interface may require more complex circuitry - Higher cost compared to lower-density memory options

Working Principles

The IDT71V65602S133PF8 is a synchronous SRAM that stores data using electronic circuits. It operates by receiving address signals from the system, which are used to select specific memory locations. The data stored in these locations can be read or written based on control signals provided by the system. The synchronous nature of the device ensures proper timing and synchronization between the memory and the system.

Detailed Application Field Plans

The ID

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V65602S133PF8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V65602S133PF8 in technical solutions:

  1. Question: What is IDT71V65602S133PF8?
    Answer: IDT71V65602S133PF8 is a specific model of synchronous SRAM (Static Random Access Memory) chip manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71V65602S133PF8?
    Answer: The IDT71V65602S133PF8 has a capacity of 4 Megabytes (32 Megabits) organized as 256K words x 16 bits.

  3. Question: What is the operating voltage range for IDT71V65602S133PF8?
    Answer: The operating voltage range for IDT71V65602S133PF8 is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71V65602S133PF8?
    Answer: The access time of IDT71V65602S133PF8 is 13.5 ns, which refers to the time it takes for data to be read from or written to the memory.

  5. Question: Can IDT71V65602S133PF8 be used in industrial applications?
    Answer: Yes, IDT71V65602S133PF8 is suitable for use in industrial applications due to its wide operating temperature range (-40°C to +85°C) and robust design.

  6. Question: Does IDT71V65602S133PF8 support burst mode operation?
    Answer: Yes, IDT71V65602S133PF8 supports burst mode operation with various burst lengths, allowing for efficient data transfer.

  7. Question: What is the pin configuration of IDT71V65602S133PF8?
    Answer: IDT71V65602S133PF8 has a 48-pin TSOP (Thin Small Outline Package) with specific pin assignments for power, address, data, and control signals.

  8. Question: Can IDT71V65602S133PF8 be used in battery-powered devices?
    Answer: Yes, IDT71V65602S133PF8 can be used in battery-powered devices as it operates within the typical voltage range of portable electronics.

  9. Question: Is IDT71V65602S133PF8 compatible with other memory chips?
    Answer: Yes, IDT71V65602S133PF8 is compatible with other SRAM chips and can be used alongside them in multi-chip memory systems.

  10. Question: Are there any application notes or reference designs available for IDT71V65602S133PF8?
    Answer: Yes, IDT provides application notes and reference designs that can help users integrate IDT71V65602S133PF8 into their technical solutions effectively.

Please note that these questions and answers are general and may vary depending on the specific requirements and use cases of your technical solution.