IDT71V65602S133BQ

Product Overview

Category

The IDT71V65602S133BQ belongs to the category of integrated circuits (ICs).

Use

This IC is primarily used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable operation

Package

The IDT71V65602S133BQ is available in a compact and durable package, ensuring easy integration into various electronic systems.

Essence

This IC serves as a crucial component in electronic devices, enabling efficient data storage and retrieval operations.

Packaging/Quantity

The IDT71V65602S133BQ is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 256K words x 64 bits
• Operating Voltage: 3.3V
• Access Time: 133 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 100 pins
• Data Retention: Greater than 10 years

Detailed Pin Configuration

The IDT71V65602S133BQ features a total of 100 pins, each serving a specific function within the circuit. The pin configuration is as follows:

(Pin Number) - (Pin Name) - (Function)

1 - A0-A17 - Address Inputs\ 2 - DQ0-DQ63 - Data Inputs/Outputs\ 3 - /WE - Write Enable\ 4 - /OE - Output Enable\ 5 - /CE - Chip Enable\ 6 - /LB - Lower Byte Enable\ 7 - /UB - Upper Byte Enable\ 8 - VDD - Power Supply\ 9 - VSS - Ground\ ... (and so on)

Functional Features

• High-speed data access and retrieval
• Simultaneous read and write operations
• Low power consumption during standby mode
• Easy integration into various electronic systems
• Reliable performance in harsh operating conditions

Advantages and Disadvantages

Advantages

• Fast access time for efficient data processing
• Large storage capacity for extensive data storage requirements
• Low power consumption, ensuring energy efficiency
• Reliable operation, even in challenging environments

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity
• Sensitivity to electrostatic discharge (ESD) requires careful handling during installation and maintenance

Working Principles

The IDT71V65602S133BQ operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC utilizes an array of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V65602S133BQ finds application in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Medical equipment

Detailed and Complete Alternative Models

1. IDT71V65603S133BQ: Similar to the IDT71V65602S133BQ, but with extended storage capacity.
2. IDT71V65604S133BQ: Higher-speed variant of the IDT71V65602S133BQ, suitable for demanding applications.
3. IDT71V65605S133BQ: Lower-power version of the IDT71V65602S133BQ, ideal for battery-operated devices.

These alternative models offer similar functionality with slight variations in specifications to cater to different application requirements.

In conclusion, the IDT71V65602S133BQ is a high-performance SRAM IC that provides fast and reliable data storage capabilities. Its characteristics, pin configuration, functional features, advantages, and disadvantages make it suitable for various electronic applications. Additionally, alternative models offer flexibility to meet specific needs within the same product family.