IDT71V65602S100BG

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics: High-speed, low-power, synchronous SRAM
Package: Ball Grid Array (BGA)
Essence: Provides fast and reliable data storage and retrieval capabilities
Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

Memory Type: Synchronous Static Random Access Memory (SRAM)
Density: 4 Megabits (4M)
Organization: 256K words x 16 bits
Operating Voltage: 3.3V
Access Time: 10 ns
Interface: Parallel
Operating Temperature Range: -40°C to +85°C

Pin Configuration

The IDT71V65602S100BG has a total of 119 pins. The pin configuration is as follows:

VDDQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
VSSQ
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
VDDQ
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
A64
A65
A66
A67
A68
A69
A70
A71
A72
A73
A74
A75
A76
A77
A78
A79
A80
A81
A82
A83
A84
A85
A86
A87
A88
A89
A90
A91
A92
A93
A94
A95
A96
A97
A98
VDDQ

Functional Features

High-speed operation for quick data access
Low-power consumption for energy efficiency
Synchronous interface for easy integration with other components
Reliable data storage and retrieval capabilities
Supports various memory operations such as read, write, and erase

Advantages and Disadvantages

Advantages: - Fast access time for efficient data processing - Low power consumption for energy-efficient operation - Reliable data storage and retrieval capabilities - Easy integration with other components due to synchronous interface

Disadvantages: - Limited memory capacity compared to higher-density memory devices - Higher cost per bit compared to larger memory devices

Working Principles

The IDT71V65602S100BG is a synchronous SRAM that operates based on the principles of static random access memory. It stores data in a volatile manner, meaning the data is lost when power is

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V65602S100BG v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V65602S100BG in technical solutions:

Question: What is the IDT71V65602S100BG?
Answer: The IDT71V65602S100BG is a synchronous SRAM (Static Random Access Memory) device manufactured by Integrated Device Technology (IDT).
Question: What is the capacity of the IDT71V65602S100BG?
Answer: The IDT71V65602S100BG has a capacity of 8 Megabits (1 Megabyte) organized as 512K words x 16 bits.
Question: What is the operating voltage range for this device?
Answer: The IDT71V65602S100BG operates at a voltage range of 3.0V to 3.6V.
Question: What is the access time of the IDT71V65602S100BG?
Answer: The access time of this device is 10ns, meaning it takes 10 nanoseconds to read or write data.
Question: Can the IDT71V65602S100BG be used in battery-powered devices?
Answer: Yes, the low operating voltage range makes it suitable for battery-powered devices.
Question: Does the IDT71V65602S100BG support burst mode operation?
Answer: Yes, this device supports burst mode operation with a burst length of 1, 2, 4, 8, or full page.
Question: What is the package type of the IDT71V65602S100BG?
Answer: The IDT71V65602S100BG comes in a 48-pin TSOP (Thin Small Outline Package) type.
Question: Can this device be used in industrial applications?
Answer: Yes, the IDT71V65602S100BG is suitable for industrial applications due to its wide operating temperature range (-40°C to +85°C).
Question: Does the IDT71V65602S100BG have any built-in error correction capabilities?
Answer: No, this device does not have built-in error correction capabilities. External error correction techniques can be used if required.
Question: Is the IDT71V65602S100BG pin-compatible with other SRAM devices?
Answer: The IDT71V65602S100BG follows a standard pinout and is compatible with other 48-pin TSOP SRAM devices.

Please note that these answers are general and may vary depending on specific application requirements.