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IDT71V632S8PFG

IDT71V632S8PFG

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
  • Package: 100-pin TQFP (Thin Quad Flat Package)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Size: 32 Megabits (4 Megabytes)
  • Organization: 4M x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 8 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 10 years
  • Standby Current: Less than 5 mA
  • Package Dimensions: 14mm x 14mm

Pin Configuration

The IDT71V632S8PFG has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. A0
  12. A1
  13. A2
  14. A3
  15. A4
  16. A5
  17. A6
  18. A7
  19. A8
  20. A9
  21. A10
  22. A11
  23. A12
  24. A13
  25. A14
  26. A15
  27. A16
  28. A17
  29. A18
  30. A19
  31. A20
  32. A21
  33. A22
  34. A23
  35. A24
  36. A25
  37. A26
  38. A27
  39. A28
  40. A29
  41. A30
  42. A31
  43. CE1#
  44. CE2#
  45. WE#
  46. OE#
  47. UB#
  48. LB#
  49. BYTE#
  50. ADSC#
  51. ADSP#
  52. ADSTB#
  53. ADSP#
  54. ADSC#
  55. BYTE#
  56. LB#
  57. UB#
  58. OE#
  59. WE#
  60. CE2#
  61. CE1#
  62. A31
  63. A30
  64. A29
  65. A28
  66. A27
  67. A26
  68. A25
  69. A24
  70. A23
  71. A22
  72. A21
  73. A20
  74. A19
  75. A18
  76. A17
  77. A16
  78. A15
  79. A14
  80. A13
  81. A12
  82. A11
  83. A10
  84. A9
  85. A8
  86. A7
  87. A6
  88. A5
  89. A4
  90. A3
  91. A2
  92. A1
  93. A0
  94. GND
  95. DQ7
  96. DQ6
  97. DQ5
  98. DQ4
  99. DQ3
  100. DQ2

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption ensures efficient use of energy.
  • Synchronous design enables synchronized data transfers.
  • Static RAM technology provides non-volatile storage capabilities.
  • Reliable performance with a long data retention period.

Advantages and Disadvantages

Advantages: - Fast access time for efficient data processing. - Low power consumption for energy-efficient operation. - High reliability and long data retention period. - Synchronous design allows for synchronized data transfers.

Disadvantages: - Limited memory size compared to other storage devices. - Higher cost compared to traditional memory technologies.

Working Principles

The IDT71V632S8PFG is a synchronous static RAM (SRAM) that stores and retrieves data using electronic circuits. It operates by storing data in flip-flops, which retain their state as long as power is supplied. The synchronous design ensures that data transfers occur at specific clock intervals, allowing for efficient communication between the memory device and the rest of the system.

Detailed Application Field Plans

The IDT71V632S8PFG is commonly used in various applications that require high-speed and reliable data storage. Some of the potential application fields include:

  1. Computer Systems: Used as cache memory or main memory

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V632S8PFG v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V632S8PFG in technical solutions:

  1. Question: What is IDT71V632S8PFG?
    Answer: IDT71V632S8PFG is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71V632S8PFG?
    Answer: The IDT71V632S8PFG has a capacity of 32 kilobits (Kb), which is equivalent to 4 kilobytes (KB).

  3. Question: What is the operating voltage range for IDT71V632S8PFG?
    Answer: The operating voltage range for IDT71V632S8PFG is typically between 4.5 volts (V) and 5.5 volts (V).

  4. Question: What is the access time of IDT71V632S8PFG?
    Answer: The access time of IDT71V632S8PFG is typically 8 nanoseconds (ns).

  5. Question: Can IDT71V632S8PFG be used in battery-powered devices?
    Answer: Yes, IDT71V632S8PFG can be used in battery-powered devices as long as the operating voltage range is within the device's power supply capabilities.

  6. Question: Is IDT71V632S8PFG compatible with other SRAMs?
    Answer: Yes, IDT71V632S8PFG is compatible with other SRAMs that have similar specifications and pin configurations.

  7. Question: What are some typical applications of IDT71V632S8PFG?
    Answer: Some typical applications of IDT71V632S8PFG include cache memory, data buffering, and general-purpose storage in various electronic systems.

  8. Question: Does IDT71V632S8PFG support multiple read/write operations simultaneously?
    Answer: No, IDT71V632S8PFG is a synchronous SRAM and does not support simultaneous read/write operations.

  9. Question: Can IDT71V632S8PFG be used in high-speed data processing systems?
    Answer: Yes, IDT71V632S8PFG can be used in high-speed data processing systems as it has a relatively fast access time.

  10. Question: Are there any specific precautions to consider when using IDT71V632S8PFG?
    Answer: It is important to follow the manufacturer's datasheet and guidelines for proper handling, power supply requirements, and signal integrity considerations when using IDT71V632S8PFG in technical solutions.