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IDT71V632S7PFI8

IDT71V632S7PFI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 100-pin TQFP (Thin Quad Flat Package)
  • Essence: Provides fast and reliable data storage and retrieval capabilities for various electronic devices
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 32 Megabits (4 Megabytes)
  • Organization: 4M x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 7 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 10 years
  • Interface: Parallel
  • Clock Frequency: Up to 133 MHz
  • Power Dissipation: Low power consumption

Pin Configuration

The IDT71V632S7PFI8 has a total of 100 pins. The pin configuration is as follows:

  1. VCCQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. A0
  12. A1
  13. A2
  14. A3
  15. A4
  16. A5
  17. A6
  18. A7
  19. A8
  20. A9
  21. A10
  22. A11
  23. A12
  24. A13
  25. A14
  26. A15
  27. A16
  28. A17
  29. A18
  30. A19
  31. A20
  32. A21
  33. A22
  34. A23
  35. A24
  36. A25
  37. A26
  38. A27
  39. A28
  40. A29
  41. A30
  42. A31
  43. CE2#
  44. CE1#
  45. WE#
  46. OE#
  47. UB#
  48. LB#
  49. CLK
  50. CLKEN#
  51. CKE
  52. CS#
  53. DQM0#
  54. DQM1#
  55. DQM2#
  56. DQM3#
  57. VCCQ
  58. DQ8
  59. DQ9
  60. DQ10
  61. DQ11
  62. DQ12
  63. DQ13
  64. DQ14
  65. DQ15
  66. GND
  67. A32
  68. A33
  69. A34
  70. A35
  71. A36
  72. A37
  73. A38
  74. A39
  75. A40
  76. A41
  77. A42
  78. A43
  79. A44
  80. A45
  81. A46
  82. A47
  83. A48
  84. A49
  85. A50
  86. A51
  87. A52
  88. A53
  89. A54
  90. A55
  91. A56
  92. A57
  93. A58
  94. A59
  95. A60
  96. A61
  97. A62
  98. A63
  99. VCC
  100. GND

Functional Features

  • High-speed operation with low access time
  • Synchronous interface for easy integration into system designs
  • Low power consumption for energy-efficient applications
  • Reliable data retention for long-term storage requirements
  • Wide operating temperature range for versatile usage scenarios
  • Parallel interface for efficient data transfer

Advantages and Disadvantages

Advantages: - Fast and reliable data storage and retrieval capabilities - Low power consumption for energy efficiency - Wide operating temperature range for versatile applications - Easy integration into system designs with synchronous interface

Disadvantages: - Limited memory density compared to other memory technologies - Higher cost per bit compared to some alternative memory solutions

Working Principles

The IDT71V632S7PFI8 is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by synchronizing data transfers with an external clock signal, allowing for high-speed and efficient data access. The memory cells within the device store binary information in the form of electrical charges, which can be read or written based on the control signals provided. The low-power design ensures efficient operation while maintaining data integrity.

Detailed Application

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V632S7PFI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V632S7PFI8 in technical solutions:

  1. Question: What is the IDT71V632S7PFI8?
    Answer: The IDT71V632S7PFI8 is a high-speed, low-power CMOS static RAM (SRAM) device with a capacity of 32 megabits (4 megabytes).

  2. Question: What is the operating voltage range for the IDT71V632S7PFI8?
    Answer: The IDT71V632S7PFI8 operates at a voltage range of 3.0V to 3.6V.

  3. Question: What is the maximum clock frequency supported by the IDT71V632S7PFI8?
    Answer: The IDT71V632S7PFI8 supports a maximum clock frequency of 166 MHz.

  4. Question: Can the IDT71V632S7PFI8 be used in battery-powered devices?
    Answer: Yes, the IDT71V632S7PFI8 is designed to operate at low power, making it suitable for battery-powered devices.

  5. Question: What is the access time of the IDT71V632S7PFI8?
    Answer: The IDT71V632S7PFI8 has an access time of 8 ns, which means it can retrieve data from memory in 8 nanoseconds.

  6. Question: Does the IDT71V632S7PFI8 support multiple read and write operations simultaneously?
    Answer: Yes, the IDT71V632S7PFI8 supports simultaneous read and write operations, allowing for efficient data transfer.

  7. Question: Can the IDT71V632S7PFI8 be used in industrial applications?
    Answer: Yes, the IDT71V632S7PFI8 is designed to withstand harsh environments and can be used in industrial applications.

  8. Question: What is the package type of the IDT71V632S7PFI8?
    Answer: The IDT71V632S7PFI8 comes in a 100-pin TQFP (Thin Quad Flat Package) package.

  9. Question: Does the IDT71V632S7PFI8 have built-in error correction capabilities?
    Answer: No, the IDT71V632S7PFI8 does not have built-in error correction capabilities. External error correction techniques may be required.

  10. Question: Can the IDT71V632S7PFI8 be used as a drop-in replacement for other SRAM devices?
    Answer: In most cases, yes. However, it is always recommended to consult the datasheet and ensure compatibility with the specific application requirements.

Please note that these answers are based on general information about the IDT71V632S7PFI8 and may vary depending on the specific implementation and use case.